TY - GEN
T1 - Failure Analysis on Diode-triggered Silicon-Controlled Rectifiers by using Nondestructive X-ray Microscopy
AU - Chen, Xinqian
AU - Jin, Mengge
AU - Feihou,
AU - Liang, Fang
AU - Zhang, Zijian
AU - Wang, Yanan
AU - Liu, Dongming
AU - Chen, Le
AU - Wang, Chaolun
AU - Liu, Zhiwei
AU - Wu, Xing
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - As the complexity of integrated circuits increases, the electrostatic discharge (ESD) protection devices become critical to reliability issues. However, the physical failure analysis of ESD devices is destructive and time-consuming. In this work, by using the X-ray microscopy (XRM), we study the abnormal change in the leakage current of diode-triggered silicon-controlled rectifiers (DTSCRs) ESD structure under transmission line pulsing stressing. XRM is nondestructive physical failure analysis method by showing the in-depth morphology information of the devices. The results show that the proposed ESD devices have two parts, one is the trigger diodes part and the other is the SCR part. The SCR part was severely damaged and the contact and vias are melted under the electrical stressing, while the trigger diodes part remains intact. The failure analysis is nondestructive, multi-view, and time-saving. It is enlightening the design of novel ESD devices.
AB - As the complexity of integrated circuits increases, the electrostatic discharge (ESD) protection devices become critical to reliability issues. However, the physical failure analysis of ESD devices is destructive and time-consuming. In this work, by using the X-ray microscopy (XRM), we study the abnormal change in the leakage current of diode-triggered silicon-controlled rectifiers (DTSCRs) ESD structure under transmission line pulsing stressing. XRM is nondestructive physical failure analysis method by showing the in-depth morphology information of the devices. The results show that the proposed ESD devices have two parts, one is the trigger diodes part and the other is the SCR part. The SCR part was severely damaged and the contact and vias are melted under the electrical stressing, while the trigger diodes part remains intact. The failure analysis is nondestructive, multi-view, and time-saving. It is enlightening the design of novel ESD devices.
KW - X-ray microscopy
KW - electrostatic discharge
KW - failure analysis
KW - non-destructive inspection
KW - silicon-controlled rectifier (SCR)
UR - https://www.scopus.com/pages/publications/85122967885
U2 - 10.1109/IPFA53173.2021.9617299
DO - 10.1109/IPFA53173.2021.9617299
M3 - 会议稿件
AN - SCOPUS:85122967885
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
BT - 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021
Y2 - 15 September 2021 through 15 October 2021
ER -