TY - JOUR
T1 - Fabrication of sol-gel 70GeO2-30SiO2 thick films from TEOG and DEOS and investigation of the 5 eV band
AU - Jing, Chengbin
AU - Hou, Jinxia
AU - Zhang, Yongheng
PY - 2006/3/21
Y1 - 2006/3/21
N2 - Crack-free germanosilicate films, 3.6 νm-thick and containing up to 70 mol% germanium dioxide, which are inaccessible through the conventional sol-gel process, were fabricated using tetraethyl orthogermanate (TEOG) and diethylorthosilicate (DEOS) as precursors for germania and silica, respectively. The studies using viscosity, TEM and SEM revealed that DEOS contributed largely to stabilizing the GeO2-SiO2 sol and suppressing crack formation in thick films. XRD study showed that the films remained amorphous after being sintered at 600 °C in air for 60 min and annealed at 550 °C under a flowing H2/N2 atmosphere for 120 min. An intense absorption band at around 241 nm was distinctly observed in the films. The intensity of this absorption band was found to be effectively bleached by UV illumination. Weak photoluminescence emission bands which originated from the neutral oxygen di-vacancy were detected near 375 and 275 nm. Therefore, the 5 eV absorption band observed in this work was mainly caused by the neutral oxygen monovacancy. A saturated absorptivity change of the UV-bleachable band after prolonged illumination was found to be 389 cm-1 for 70GeO 2-30SiO2 films.
AB - Crack-free germanosilicate films, 3.6 νm-thick and containing up to 70 mol% germanium dioxide, which are inaccessible through the conventional sol-gel process, were fabricated using tetraethyl orthogermanate (TEOG) and diethylorthosilicate (DEOS) as precursors for germania and silica, respectively. The studies using viscosity, TEM and SEM revealed that DEOS contributed largely to stabilizing the GeO2-SiO2 sol and suppressing crack formation in thick films. XRD study showed that the films remained amorphous after being sintered at 600 °C in air for 60 min and annealed at 550 °C under a flowing H2/N2 atmosphere for 120 min. An intense absorption band at around 241 nm was distinctly observed in the films. The intensity of this absorption band was found to be effectively bleached by UV illumination. Weak photoluminescence emission bands which originated from the neutral oxygen di-vacancy were detected near 375 and 275 nm. Therefore, the 5 eV absorption band observed in this work was mainly caused by the neutral oxygen monovacancy. A saturated absorptivity change of the UV-bleachable band after prolonged illumination was found to be 389 cm-1 for 70GeO 2-30SiO2 films.
UR - https://www.scopus.com/pages/publications/33751168481
U2 - 10.1088/0022-3727/39/6/025
DO - 10.1088/0022-3727/39/6/025
M3 - 文章
AN - SCOPUS:33751168481
SN - 0022-3727
VL - 39
SP - 1174
EP - 1180
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 6
M1 - 025
ER -