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Fabrication and properties of solution processed all polymer thin-film ferroelectric device

  • Haisheng Xu*
  • , Xuerang Fang
  • , Xiaobing Liu
  • , Shan Wu
  • , Yingjun Gu
  • , Xiangjian Meng
  • , Jinglan Sun
  • , Junhao Chu
  • *Corresponding author for this work
  • East China University of Science and Technology
  • CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

Abstract

A ferroelectric device, making use of a flexible plastic, polyethylenterephtalate (PET), as a substrate was fabricated by all solution processes. PET was globally coated by a conducting polymer, poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) acid (PEDOT/PSSH), which is used as bottom electrode. The ferroelectric copolymer, poly(vinylidenefluoride- trifluoroethylene) (PVDF-TrFE), thin film was deposited by spin-coating process from solution. The top electrode, polyaniline, was coated by solution process as well. The ferroelectric properties were measured on this all solution processed all polymer ferroelectric thin-film devices. A square and symmetric hysteresis loop was observed with high-polarization level at 15-V drive voltage on a all polymer device with 700 Å (PVDF-TrFE) film. The relatively inexpensive conducting polyaniline electrode is functional well and therefore is a good candidate as electrode material for ferroelectric polymer thin-film device. The remnant polarization Pr was 8.5 μC/cm2 before the fatigue. The ferroelectric degradation starts after 1 × 103 times of switching and decreases to 4.9 μC/cm2 after 1 × 105 times of switching. The pulse polarization test shows switching take places as fast as a few micro seconds to reach 90% of the saturated polarization.

Original languageEnglish
Pages (from-to)1510-1513
Number of pages4
JournalJournal of Applied Polymer Science
Volume120
Issue number3
DOIs
StatePublished - 5 May 2011
Externally publishedYes

Keywords

  • conducting polymer
  • ferroelectricity
  • fluoropolymers
  • printed electronics
  • random access memory

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