TY - GEN
T1 - Fabrication and characterization of boron-doped silicon microchannel plates as lithium-ion microbatteries anodes
AU - Wang, Fei
AU - Xu, Shaohui
AU - Zhu, Shanshan
AU - Wang, Lianwei
PY - 2012
Y1 - 2012
N2 - A three-dimensional (3D) anode using boron-doped Si microchannel plate (Si-MCP) as matrix and active material was proposed. Using lithium foils as the counter electrodes, typical half-cells were fabricated and tested. Galvanostatic charge-discharge (C-D) measurements were conducted between 0.05 and 1.5 V, boron-doped Si-MCP anode exhibited a charge capacity of 3250 mAh g-1 with a coulombic efficiency close to 46% in the initial cycle, but above 79.6% in the second cycle. Moreover, it could keep reversible discharge capacities above 500 mAh g-1 after the 10th cycle. Based on cyclic voltammetry (CV) data, the mechanism about the lithiation of boron-doped Si-MCP was also proposed.
AB - A three-dimensional (3D) anode using boron-doped Si microchannel plate (Si-MCP) as matrix and active material was proposed. Using lithium foils as the counter electrodes, typical half-cells were fabricated and tested. Galvanostatic charge-discharge (C-D) measurements were conducted between 0.05 and 1.5 V, boron-doped Si-MCP anode exhibited a charge capacity of 3250 mAh g-1 with a coulombic efficiency close to 46% in the initial cycle, but above 79.6% in the second cycle. Moreover, it could keep reversible discharge capacities above 500 mAh g-1 after the 10th cycle. Based on cyclic voltammetry (CV) data, the mechanism about the lithiation of boron-doped Si-MCP was also proposed.
UR - https://www.scopus.com/pages/publications/84874923831
U2 - 10.1109/ICSICT.2012.6467664
DO - 10.1109/ICSICT.2012.6467664
M3 - 会议稿件
AN - SCOPUS:84874923831
SN - 9781467324724
T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Y2 - 29 October 2012 through 1 November 2012
ER -