Fabrication and characteristics of porous germanium films

Chengbin Jing; Chuanjian Zhang; Xiaodan Zang; Wenzheng Zhou; Wei Bai; Tie Lin; Junhao Chu

doi:10.1088/1468-6996/10/6/065001

Fabrication and characteristics of porous germanium films

Chengbin Jing^*, Chuanjian Zhang, Xiaodan Zang, Wenzheng Zhou, Wei Bai, Tie Lin, Junhao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Porous germanium films with good adhesion to the substrate were produced by annealing GeO₂ ceramic films in H₂ atmosphere. The reduction of GeO₂ started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (10²⁰ cm^-3) and a maximum of Hall mobility at ∼225 K. Their p-type conductivity is dominated by the defect scattering mechanism.

Original language	English
Article number	065001
Journal	Science and Technology of Advanced Materials
Volume	10
Issue number	6
DOIs	https://doi.org/10.1088/1468-6996/10/6/065001
State	Published - 2009
Externally published	Yes

Keywords

Germanium
Porous structured film
Semiconducting behavior
Visible photoluminescence

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10.1088/1468-6996/10/6/065001

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title = "Fabrication and characteristics of porous germanium films",

abstract = "Porous germanium films with good adhesion to the substrate were produced by annealing GeO2 ceramic films in H2 atmosphere. The reduction of GeO2 started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (1020 cm-3) and a maximum of Hall mobility at ∼225 K. Their p-type conductivity is dominated by the defect scattering mechanism.",

keywords = "Germanium, Porous structured film, Semiconducting behavior, Visible photoluminescence",

author = "Chengbin Jing and Chuanjian Zhang and Xiaodan Zang and Wenzheng Zhou and Wei Bai and Tie Lin and Junhao Chu",

year = "2009",

doi = "10.1088/1468-6996/10/6/065001",

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volume = "10",

journal = "Science and Technology of Advanced Materials",

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T1 - Fabrication and characteristics of porous germanium films

AU - Jing, Chengbin

AU - Zhang, Chuanjian

AU - Zang, Xiaodan

AU - Zhou, Wenzheng

AU - Bai, Wei

AU - Lin, Tie

AU - Chu, Junhao

PY - 2009

Y1 - 2009

N2 - Porous germanium films with good adhesion to the substrate were produced by annealing GeO2 ceramic films in H2 atmosphere. The reduction of GeO2 started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (1020 cm-3) and a maximum of Hall mobility at ∼225 K. Their p-type conductivity is dominated by the defect scattering mechanism.

AB - Porous germanium films with good adhesion to the substrate were produced by annealing GeO2 ceramic films in H2 atmosphere. The reduction of GeO2 started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (1020 cm-3) and a maximum of Hall mobility at ∼225 K. Their p-type conductivity is dominated by the defect scattering mechanism.

KW - Germanium

KW - Porous structured film

KW - Semiconducting behavior

KW - Visible photoluminescence

UR - https://www.scopus.com/pages/publications/75649118865

U2 - 10.1088/1468-6996/10/6/065001

DO - 10.1088/1468-6996/10/6/065001

M3 - 文章

AN - SCOPUS:75649118865

SN - 1468-6996

VL - 10

JO - Science and Technology of Advanced Materials

JF - Science and Technology of Advanced Materials

IS - 6

M1 - 065001

ER -

Fabrication and characteristics of porous germanium films

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Keywords

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