Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection

Zhiming Huang; Wei Zhou; Jinchao Tong; Jingguo Huang; Cheng Ouyang; Yue Qu; Jing Wu; Yanqing Gao; Junhao Chu

doi:10.1002/adma.201503350

Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection

Zhiming Huang^*
, Wei Zhou
, Jinchao Tong
, Jingguo Huang
, Cheng Ouyang
, Yue Qu
, Jing Wu
, Yanqing Gao
, Junhao Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor, using a wrapped metal-semiconductor-metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.

Original language	English
Pages (from-to)	112-117
Number of pages	6
Journal	Advanced Materials
Volume	28
Issue number	1
DOIs	https://doi.org/10.1002/adma.201503350
State	Published - 6 Jan 2016
Externally published	Yes

Keywords

electromagnetic induced wells
photoelectric effect
terahertz detection

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10.1002/adma.201503350

Cite this

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title = "Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection",

abstract = "Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor, using a wrapped metal-semiconductor-metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.",

keywords = "electromagnetic induced wells, photoelectric effect, terahertz detection",

author = "Zhiming Huang and Wei Zhou and Jinchao Tong and Jingguo Huang and Cheng Ouyang and Yue Qu and Jing Wu and Yanqing Gao and Junhao Chu",

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AU - Huang, Zhiming

AU - Zhou, Wei

AU - Tong, Jinchao

AU - Huang, Jingguo

AU - Ouyang, Cheng

AU - Qu, Yue

AU - Wu, Jing

AU - Gao, Yanqing

AU - Chu, Junhao

PY - 2016/1/6

Y1 - 2016/1/6

N2 - Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor, using a wrapped metal-semiconductor-metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.

AB - Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor, using a wrapped metal-semiconductor-metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.

KW - electromagnetic induced wells

KW - photoelectric effect

KW - terahertz detection

UR - https://www.scopus.com/pages/publications/84955384964

U2 - 10.1002/adma.201503350

DO - 10.1002/adma.201503350

M3 - 文章

AN - SCOPUS:84955384964

SN - 0935-9648

VL - 28

SP - 112

EP - 117

JO - Advanced Materials

JF - Advanced Materials

IS - 1

ER -

Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection

Abstract

Keywords

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