Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes

Z. J. Qiu; Y. S. Gui; S. L. Guo; N. Dai; J. H. Chu; X. X. Zhang; Y. P. Zeng

doi:10.1063/1.1682690

Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes

Z. J. Qiu^*
, Y. S. Gui
, S. L. Guo
, N. Dai
, J. H. Chu
, X. X. Zhang
, Y. P. Zeng

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics
CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The current-voltage characteristics of GaAs-based resonant tunneling diodes were investigated in the presence of a perpendicular magnetic field. It was observed that the electron resonant tunneling was strongly suppressed by the applied magnetic field. The current instability were also observed in the negative differential resistance (NDR) and was attributed to current oscillations between device and external circuit. It was found that the plateau-like structures were due to the coupling between the energy levels in the emitter well and in the main quantum well.

Original language	English
Pages (from-to)	1961-1963
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	11
DOIs	https://doi.org/10.1063/1.1682690
State	Published - 15 Mar 2004
Externally published	Yes

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title = "Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes",

abstract = "The current-voltage characteristics of GaAs-based resonant tunneling diodes were investigated in the presence of a perpendicular magnetic field. It was observed that the electron resonant tunneling was strongly suppressed by the applied magnetic field. The current instability were also observed in the negative differential resistance (NDR) and was attributed to current oscillations between device and external circuit. It was found that the plateau-like structures were due to the coupling between the energy levels in the emitter well and in the main quantum well.",

author = "Qiu, \{Z. J.\} and Gui, \{Y. S.\} and Guo, \{S. L.\} and N. Dai and Chu, \{J. H.\} and Zhang, \{X. X.\} and Zeng, \{Y. P.\}",

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AU - Qiu, Z. J.

AU - Gui, Y. S.

AU - Guo, S. L.

AU - Dai, N.

AU - Chu, J. H.

AU - Zhang, X. X.

AU - Zeng, Y. P.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - The current-voltage characteristics of GaAs-based resonant tunneling diodes were investigated in the presence of a perpendicular magnetic field. It was observed that the electron resonant tunneling was strongly suppressed by the applied magnetic field. The current instability were also observed in the negative differential resistance (NDR) and was attributed to current oscillations between device and external circuit. It was found that the plateau-like structures were due to the coupling between the energy levels in the emitter well and in the main quantum well.

AB - The current-voltage characteristics of GaAs-based resonant tunneling diodes were investigated in the presence of a perpendicular magnetic field. It was observed that the electron resonant tunneling was strongly suppressed by the applied magnetic field. The current instability were also observed in the negative differential resistance (NDR) and was attributed to current oscillations between device and external circuit. It was found that the plateau-like structures were due to the coupling between the energy levels in the emitter well and in the main quantum well.

UR - https://www.scopus.com/pages/publications/1842788516

U2 - 10.1063/1.1682690

DO - 10.1063/1.1682690

M3 - 文章

AN - SCOPUS:1842788516

SN - 0003-6951

VL - 84

SP - 1961

EP - 1963

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes

Abstract

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