Abstract
The quantum interference corrections to magnetoconductivity were studied experimentally in a gated high-mobility Inx Ga1-x As/InP quantum well structure with strong spin-orbit interaction. The phase-breaking time and spin splitting were extracted by fitting the experimental data using a recent model, which is applicable to arbitrarily strong spin-orbit coupling and magnetic field. It is experimentally verified that this model satisfactorily describes the data over a large range of magnetic fields extended from diffusion to nondiffusion regimes. The obtained dependencies of the phase-breaking and spin-relaxation time constants vs temperature and the gate voltage are in good agreement with existing theoretical predictions.
| Original language | English |
|---|---|
| Article number | 035304 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 78 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1 Jul 2008 |
| Externally published | Yes |