Experimental study of inversion layer subband structure on HgCdTe

Junhao Chu; R. Sizmann; F. Koch; J. Ziegler; H. Maier

Experimental study of inversion layer subband structure on HgCdTe

Junhao Chu^*
, R. Sizmann
, F. Koch
, J. Ziegler
, H. Maier

^*Corresponding author for this work

Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The Measurements of capacitance spectroscopy, magnetotransport oscillation and cyclotron resonance for LPE HgCdTe MIS structure samples are performed at temperature of 4.2 K, and the inversion layer electron concentration N_s dependent subband structures including subband energy E_o, Fermi energy E_f, effective mass M^*, average depth of inversion layer Z₀ and depletion layer depth Z_d in the electric quantum limit are determined quantitatively from the experimental measurements by using the physical parameter fitting method (PPFM).

Original language	English
Pages (from-to)	332-340
Number of pages	9
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	11
Issue number	5
State	Published - May 1990
Externally published	Yes

Cite this

@article{b236a8a7577441e9a96f0aecc577863c,

title = "Experimental study of inversion layer subband structure on HgCdTe",

abstract = "The Measurements of capacitance spectroscopy, magnetotransport oscillation and cyclotron resonance for LPE HgCdTe MIS structure samples are performed at temperature of 4.2 K, and the inversion layer electron concentration Ns dependent subband structures including subband energy Eo, Fermi energy Ef, effective mass M*, average depth of inversion layer Z0 and depletion layer depth Zd in the electric quantum limit are determined quantitatively from the experimental measurements by using the physical parameter fitting method (PPFM).",

author = "Junhao Chu and R. Sizmann and F. Koch and J. Ziegler and H. Maier",

year = "1990",

month = may,

language = "英语",

volume = "11",

pages = "332--340",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "5",

}

TY - JOUR

T1 - Experimental study of inversion layer subband structure on HgCdTe

AU - Chu, Junhao

AU - Sizmann, R.

AU - Koch, F.

AU - Ziegler, J.

AU - Maier, H.

PY - 1990/5

Y1 - 1990/5

N2 - The Measurements of capacitance spectroscopy, magnetotransport oscillation and cyclotron resonance for LPE HgCdTe MIS structure samples are performed at temperature of 4.2 K, and the inversion layer electron concentration Ns dependent subband structures including subband energy Eo, Fermi energy Ef, effective mass M*, average depth of inversion layer Z0 and depletion layer depth Zd in the electric quantum limit are determined quantitatively from the experimental measurements by using the physical parameter fitting method (PPFM).

AB - The Measurements of capacitance spectroscopy, magnetotransport oscillation and cyclotron resonance for LPE HgCdTe MIS structure samples are performed at temperature of 4.2 K, and the inversion layer electron concentration Ns dependent subband structures including subband energy Eo, Fermi energy Ef, effective mass M*, average depth of inversion layer Z0 and depletion layer depth Zd in the electric quantum limit are determined quantitatively from the experimental measurements by using the physical parameter fitting method (PPFM).

UR - https://www.scopus.com/pages/publications/0025430003

M3 - 文章

AN - SCOPUS:0025430003

SN - 0253-4177

VL - 11

SP - 332

EP - 340

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 5

ER -

Experimental study of inversion layer subband structure on HgCdTe

Abstract

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