Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT

Yabin Sun; Jun Fu; Yudong Wang; Wei Zhou; Zhihong Liu; Xiaojin Li; Yanling Shi

doi:10.1016/j.microrel.2016.08.008

Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT

Yabin Sun
, Jun Fu
, Yudong Wang
, Wei Zhou
, Zhihong Liu
, Xiaojin Li
, Yanling Shi^*

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This work presents a comprehensive investigation of single-event transient (SET) in SiGe HBT induced by pulsed laser irradiation at different bias conditions. The impacts of collector voltage V_CC and base voltage V_B on SET are compared and discussed. Experimental results show that SET in SiGe HBT highly depends on the applied bias conditions during irradiation. The underlying physical mechanisms are analyzed in detail. It is found that the variation of collector transient current approximately satisfies an ideal exponential discharge law. The additional discharge path plays a significant role in collector charge collection and discharge time constant once the transistors arrive at the reverse-active mode.

Original language	English
Pages (from-to)	41-46
Number of pages	6
Journal	Microelectronics Reliability
Volume	65
DOIs	https://doi.org/10.1016/j.microrel.2016.08.008
State	Published - 1 Oct 2016

Keywords

Bias dependence
Pulsed laser irradiation
SiGe HBT
Single-event transient

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10.1016/j.microrel.2016.08.008

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title = "Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT",

abstract = "This work presents a comprehensive investigation of single-event transient (SET) in SiGe HBT induced by pulsed laser irradiation at different bias conditions. The impacts of collector voltage VCC and base voltage VB on SET are compared and discussed. Experimental results show that SET in SiGe HBT highly depends on the applied bias conditions during irradiation. The underlying physical mechanisms are analyzed in detail. It is found that the variation of collector transient current approximately satisfies an ideal exponential discharge law. The additional discharge path plays a significant role in collector charge collection and discharge time constant once the transistors arrive at the reverse-active mode.",

keywords = "Bias dependence, Pulsed laser irradiation, SiGe HBT, Single-event transient",

author = "Yabin Sun and Jun Fu and Yudong Wang and Wei Zhou and Zhihong Liu and Xiaojin Li and Yanling Shi",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

month = oct,

day = "1",

doi = "10.1016/j.microrel.2016.08.008",

language = "英语",

volume = "65",

pages = "41--46",

journal = "Microelectronics Reliability",

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TY - JOUR

T1 - Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT

AU - Sun, Yabin

AU - Fu, Jun

AU - Wang, Yudong

AU - Zhou, Wei

AU - Liu, Zhihong

AU - Li, Xiaojin

AU - Shi, Yanling

PY - 2016/10/1

Y1 - 2016/10/1

N2 - This work presents a comprehensive investigation of single-event transient (SET) in SiGe HBT induced by pulsed laser irradiation at different bias conditions. The impacts of collector voltage VCC and base voltage VB on SET are compared and discussed. Experimental results show that SET in SiGe HBT highly depends on the applied bias conditions during irradiation. The underlying physical mechanisms are analyzed in detail. It is found that the variation of collector transient current approximately satisfies an ideal exponential discharge law. The additional discharge path plays a significant role in collector charge collection and discharge time constant once the transistors arrive at the reverse-active mode.

AB - This work presents a comprehensive investigation of single-event transient (SET) in SiGe HBT induced by pulsed laser irradiation at different bias conditions. The impacts of collector voltage VCC and base voltage VB on SET are compared and discussed. Experimental results show that SET in SiGe HBT highly depends on the applied bias conditions during irradiation. The underlying physical mechanisms are analyzed in detail. It is found that the variation of collector transient current approximately satisfies an ideal exponential discharge law. The additional discharge path plays a significant role in collector charge collection and discharge time constant once the transistors arrive at the reverse-active mode.

KW - Bias dependence

KW - Pulsed laser irradiation

KW - SiGe HBT

KW - Single-event transient

UR - https://www.scopus.com/pages/publications/84992562752

U2 - 10.1016/j.microrel.2016.08.008

DO - 10.1016/j.microrel.2016.08.008

M3 - 文章

AN - SCOPUS:84992562752

SN - 0026-2714

VL - 65

SP - 41

EP - 46

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT

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Keywords

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