Experimental investigations of the bismuth oxide film grown by atomic layer deposition using triphenyl bismuth

Q. Qiao; Y. W. Li; J. Z. Zhang; Z. G. Hu; J. H. Chu

doi:10.1016/j.tsf.2016.12.021

Experimental investigations of the bismuth oxide film grown by atomic layer deposition using triphenyl bismuth

Q. Qiao
, Y. W. Li^*
, J. Z. Zhang
, Z. G. Hu
, J. H. Chu

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University
CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Bismuth oxide thin films have been produced from the precursor of triphenyl bismuth and ozone by using the atomic layer deposition (ALD) technique. The growth rate of 0.23 Å/cycle is independent to deposition temperature at the range of 250 °C to 320 °C, and the self-limiting saturated adsorption of ALD for bismuth-source and oxygen-source precursors was verified. The films obtained in the ALD window (between 250 °C and 320 °C) have an indirect band gap of ~ 2.77 eV that is compatible with Bi₂O_{3 − δ}. High-resolution transmission electron microscopy reveals a mixed growth mode, horizontal growth initially, and subsequent vertical/island growth during the deposition process.

Original language	English
Pages (from-to)	65-70
Number of pages	6
Journal	Thin Solid Films
Volume	622
DOIs	https://doi.org/10.1016/j.tsf.2016.12.021
State	Published - 31 Jan 2017

Keywords

Atomic layer deposition
Bismuth oxide
Mixed growth mode
Nanofabrication
Triphenyl bismuth

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10.1016/j.tsf.2016.12.021

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title = "Experimental investigations of the bismuth oxide film grown by atomic layer deposition using triphenyl bismuth",

abstract = "Bismuth oxide thin films have been produced from the precursor of triphenyl bismuth and ozone by using the atomic layer deposition (ALD) technique. The growth rate of 0.23 {\AA}/cycle is independent to deposition temperature at the range of 250 °C to 320 °C, and the self-limiting saturated adsorption of ALD for bismuth-source and oxygen-source precursors was verified. The films obtained in the ALD window (between 250 °C and 320 °C) have an indirect band gap of \textasciitilde{} 2.77 eV that is compatible with Bi2O3 − δ. High-resolution transmission electron microscopy reveals a mixed growth mode, horizontal growth initially, and subsequent vertical/island growth during the deposition process.",

keywords = "Atomic layer deposition, Bismuth oxide, Mixed growth mode, Nanofabrication, Triphenyl bismuth",

author = "Q. Qiao and Li, \{Y. W.\} and Zhang, \{J. Z.\} and Hu, \{Z. G.\} and Chu, \{J. H.\}",

note = "Publisher Copyright: {\textcopyright} 2016",

year = "2017",

month = jan,

day = "31",

doi = "10.1016/j.tsf.2016.12.021",

language = "英语",

volume = "622",

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journal = "Thin Solid Films",

issn = "0040-6090",

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TY - JOUR

T1 - Experimental investigations of the bismuth oxide film grown by atomic layer deposition using triphenyl bismuth

AU - Qiao, Q.

AU - Li, Y. W.

AU - Zhang, J. Z.

AU - Hu, Z. G.

AU - Chu, J. H.

PY - 2017/1/31

Y1 - 2017/1/31

N2 - Bismuth oxide thin films have been produced from the precursor of triphenyl bismuth and ozone by using the atomic layer deposition (ALD) technique. The growth rate of 0.23 Å/cycle is independent to deposition temperature at the range of 250 °C to 320 °C, and the self-limiting saturated adsorption of ALD for bismuth-source and oxygen-source precursors was verified. The films obtained in the ALD window (between 250 °C and 320 °C) have an indirect band gap of ~ 2.77 eV that is compatible with Bi2O3 − δ. High-resolution transmission electron microscopy reveals a mixed growth mode, horizontal growth initially, and subsequent vertical/island growth during the deposition process.

AB - Bismuth oxide thin films have been produced from the precursor of triphenyl bismuth and ozone by using the atomic layer deposition (ALD) technique. The growth rate of 0.23 Å/cycle is independent to deposition temperature at the range of 250 °C to 320 °C, and the self-limiting saturated adsorption of ALD for bismuth-source and oxygen-source precursors was verified. The films obtained in the ALD window (between 250 °C and 320 °C) have an indirect band gap of ~ 2.77 eV that is compatible with Bi2O3 − δ. High-resolution transmission electron microscopy reveals a mixed growth mode, horizontal growth initially, and subsequent vertical/island growth during the deposition process.

KW - Atomic layer deposition

KW - Bismuth oxide

KW - Mixed growth mode

KW - Nanofabrication

KW - Triphenyl bismuth

UR - https://www.scopus.com/pages/publications/85007173653

U2 - 10.1016/j.tsf.2016.12.021

DO - 10.1016/j.tsf.2016.12.021

M3 - 文章

AN - SCOPUS:85007173653

SN - 0040-6090

VL - 622

SP - 65

EP - 70

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Experimental investigations of the bismuth oxide film grown by atomic layer deposition using triphenyl bismuth

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Keywords

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