Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2thin films on Y2O3buffered glass substrates

Michitaka Fukumoto; Chang Yang; Wenlei Yu; Christian Patzig; Thomas Höche; Thomas Ruf; Reinhard Denecke; Michael Lorenz; Marius Grundmann

doi:10.1039/d0tc03213a

Experimental evidence of wide bandgap in triclinic (001)-oriented Sn₅O₂(PO₄)₂thin films on Y₂O₃buffered glass substrates

Michitaka Fukumoto
, Chang Yang
, Wenlei Yu
, Christian Patzig
, Thomas Höche
, Thomas Ruf
, Reinhard Denecke
, Michael Lorenz
, Marius Grundmann

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Sn5O2(PO4)2 is a promising p-type transparent semiconducting oxide. Phase-pure triclinic Sn5O2(PO4)2 thin films were grown by pulsed laser deposition using a Sn2(P2O7) target with higher phosphorus content. The (001)-oriented growth of triclinic Sn5O2(PO4)2 on glass was achieved by means of a (111)-textured Y2O3 buffer layer. STEM-EDX and XPS revealed that the composition of the obtained film is near-stoichiometric, thus indicating a suitable semiconducting material. The bandgap of the triclinic Sn5O2(PO4)2 film was estimated to be as large as 3.87 eV, which is the first experimental evidence verifying a recent theoretical prediction by Q. Xu et al., Chem. Mater., 2017, 29, 2459 quite closely.

Original language	English
Pages (from-to)	14203-14207
Number of pages	5
Journal	Journal of Materials Chemistry C
Volume	8
Issue number	40
DOIs	https://doi.org/10.1039/d0tc03213a
State	Published - 28 Oct 2020

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title = "Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2thin films on Y2O3buffered glass substrates",

abstract = "Sn5O2(PO4)2 is a promising p-type transparent semiconducting oxide. Phase-pure triclinic Sn5O2(PO4)2 thin films were grown by pulsed laser deposition using a Sn2(P2O7) target with higher phosphorus content. The (001)-oriented growth of triclinic Sn5O2(PO4)2 on glass was achieved by means of a (111)-textured Y2O3 buffer layer. STEM-EDX and XPS revealed that the composition of the obtained film is near-stoichiometric, thus indicating a suitable semiconducting material. The bandgap of the triclinic Sn5O2(PO4)2 film was estimated to be as large as 3.87 eV, which is the first experimental evidence verifying a recent theoretical prediction by Q. Xu et al., Chem. Mater., 2017, 29, 2459 quite closely.",

author = "Michitaka Fukumoto and Chang Yang and Wenlei Yu and Christian Patzig and Thomas H{\"o}che and Thomas Ruf and Reinhard Denecke and Michael Lorenz and Marius Grundmann",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2020",

month = oct,

day = "28",

doi = "10.1039/d0tc03213a",

language = "英语",

volume = "8",

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T1 - Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2thin films on Y2O3buffered glass substrates

AU - Fukumoto, Michitaka

AU - Yang, Chang

AU - Yu, Wenlei

AU - Patzig, Christian

AU - Höche, Thomas

AU - Ruf, Thomas

AU - Denecke, Reinhard

AU - Lorenz, Michael

AU - Grundmann, Marius

PY - 2020/10/28

Y1 - 2020/10/28

N2 - Sn5O2(PO4)2 is a promising p-type transparent semiconducting oxide. Phase-pure triclinic Sn5O2(PO4)2 thin films were grown by pulsed laser deposition using a Sn2(P2O7) target with higher phosphorus content. The (001)-oriented growth of triclinic Sn5O2(PO4)2 on glass was achieved by means of a (111)-textured Y2O3 buffer layer. STEM-EDX and XPS revealed that the composition of the obtained film is near-stoichiometric, thus indicating a suitable semiconducting material. The bandgap of the triclinic Sn5O2(PO4)2 film was estimated to be as large as 3.87 eV, which is the first experimental evidence verifying a recent theoretical prediction by Q. Xu et al., Chem. Mater., 2017, 29, 2459 quite closely.

AB - Sn5O2(PO4)2 is a promising p-type transparent semiconducting oxide. Phase-pure triclinic Sn5O2(PO4)2 thin films were grown by pulsed laser deposition using a Sn2(P2O7) target with higher phosphorus content. The (001)-oriented growth of triclinic Sn5O2(PO4)2 on glass was achieved by means of a (111)-textured Y2O3 buffer layer. STEM-EDX and XPS revealed that the composition of the obtained film is near-stoichiometric, thus indicating a suitable semiconducting material. The bandgap of the triclinic Sn5O2(PO4)2 film was estimated to be as large as 3.87 eV, which is the first experimental evidence verifying a recent theoretical prediction by Q. Xu et al., Chem. Mater., 2017, 29, 2459 quite closely.

UR - https://www.scopus.com/pages/publications/85094565697

U2 - 10.1039/d0tc03213a

DO - 10.1039/d0tc03213a

M3 - 文章

AN - SCOPUS:85094565697

SN - 2050-7526

VL - 8

SP - 14203

EP - 14207

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 40

ER -

Experimental evidence of wide bandgap in triclinic (001)-oriented Sn₅O₂(PO₄)₂thin films on Y₂O₃buffered glass substrates

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