Experimental approaches to zero-field spin splitting in a gated high-mobility In0.53Ga0.47 As/InP quantum well structure: Weak antilocalization and beating pattern

Y. M. Zhou; G. Yu; L. M. Wei; K. H. Gao; W. Z. Zhou; T. Lin; L. Y. Shang; S. L. Guo; J. H. Chu; N. Dai; D. G. Austing

doi:10.1063/1.3309786

Experimental approaches to zero-field spin splitting in a gated high-mobility In_0.53Ga_0.47 As/InP quantum well structure: Weak antilocalization and beating pattern

Y. M. Zhou, G. Yu, L. M. Wei, K. H. Gao, W. Z. Zhou, T. Lin, L. Y. Shang, S. L. Guo, J. H. Chu, N. Dai, D. G. Austing

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6 Scopus citations

Abstract

We report on the strong spin-orbit (SO) interaction in a gated high-mobility In_0.53Ga_0.47 As/InP quantum well two-dimensional electron gas. We establish that the SO interaction is dominated by the Rashba mechanism. The Rashba coupling parameters determined from analysis of both weak antilocalization and the beating pattern in the Shubnikov-de Haas oscillations are in reasonable agreement, and the small difference between them was explained by a magnetic-field-dependent effective g factor. The zero-field spin splitting shows nonmonotonic behavior with a maximum as the electron density is varied with the applied gate voltage. This is related to strong Rashba SO coupling in our sample.

Original language	English
Article number	053708
Journal	Journal of Applied Physics
Volume	107
Issue number	5
DOIs	https://doi.org/10.1063/1.3309786
State	Published - 2010
Externally published	Yes

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Zhou, Y. M., Yu, G., Wei, L. M., Gao, K. H., Zhou, W. Z., Lin, T., Shang, L. Y., Guo, S. L., Chu, J. H., Dai, N., & Austing, D. G. (2010). Experimental approaches to zero-field spin splitting in a gated high-mobility In_0.53Ga_0.47 As/InP quantum well structure: Weak antilocalization and beating pattern. Journal of Applied Physics, 107(5), Article 053708. https://doi.org/10.1063/1.3309786

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title = "Experimental approaches to zero-field spin splitting in a gated high-mobility In0.53Ga0.47 As/InP quantum well structure: Weak antilocalization and beating pattern",

abstract = "We report on the strong spin-orbit (SO) interaction in a gated high-mobility In0.53Ga0.47 As/InP quantum well two-dimensional electron gas. We establish that the SO interaction is dominated by the Rashba mechanism. The Rashba coupling parameters determined from analysis of both weak antilocalization and the beating pattern in the Shubnikov-de Haas oscillations are in reasonable agreement, and the small difference between them was explained by a magnetic-field-dependent effective g factor. The zero-field spin splitting shows nonmonotonic behavior with a maximum as the electron density is varied with the applied gate voltage. This is related to strong Rashba SO coupling in our sample.",

author = "Zhou, \{Y. M.\} and G. Yu and Wei, \{L. M.\} and Gao, \{K. H.\} and Zhou, \{W. Z.\} and T. Lin and Shang, \{L. Y.\} and Guo, \{S. L.\} and Chu, \{J. H.\} and N. Dai and Austing, \{D. G.\}",

year = "2010",

doi = "10.1063/1.3309786",

language = "英语",

volume = "107",

journal = "Journal of Applied Physics",

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T1 - Experimental approaches to zero-field spin splitting in a gated high-mobility In0.53Ga0.47 As/InP quantum well structure

T2 - Weak antilocalization and beating pattern

AU - Zhou, Y. M.

AU - Yu, G.

AU - Wei, L. M.

AU - Gao, K. H.

AU - Zhou, W. Z.

AU - Lin, T.

AU - Shang, L. Y.

AU - Guo, S. L.

AU - Chu, J. H.

AU - Dai, N.

AU - Austing, D. G.

PY - 2010

Y1 - 2010

N2 - We report on the strong spin-orbit (SO) interaction in a gated high-mobility In0.53Ga0.47 As/InP quantum well two-dimensional electron gas. We establish that the SO interaction is dominated by the Rashba mechanism. The Rashba coupling parameters determined from analysis of both weak antilocalization and the beating pattern in the Shubnikov-de Haas oscillations are in reasonable agreement, and the small difference between them was explained by a magnetic-field-dependent effective g factor. The zero-field spin splitting shows nonmonotonic behavior with a maximum as the electron density is varied with the applied gate voltage. This is related to strong Rashba SO coupling in our sample.

AB - We report on the strong spin-orbit (SO) interaction in a gated high-mobility In0.53Ga0.47 As/InP quantum well two-dimensional electron gas. We establish that the SO interaction is dominated by the Rashba mechanism. The Rashba coupling parameters determined from analysis of both weak antilocalization and the beating pattern in the Shubnikov-de Haas oscillations are in reasonable agreement, and the small difference between them was explained by a magnetic-field-dependent effective g factor. The zero-field spin splitting shows nonmonotonic behavior with a maximum as the electron density is varied with the applied gate voltage. This is related to strong Rashba SO coupling in our sample.

UR - https://www.scopus.com/pages/publications/77949662757

U2 - 10.1063/1.3309786

DO - 10.1063/1.3309786

M3 - 文章

AN - SCOPUS:77949662757

SN - 0021-8979

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

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ER -

Experimental approaches to zero-field spin splitting in a gated high-mobility In_0.53Ga_0.47 As/InP quantum well structure: Weak antilocalization and beating pattern

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