Excited state structure of inversion layer in P-type HgCdTe MIS structure

The C-V spectrum of P-type HgCdTe metal-insulator-semiconductor (MIS) structure was obtained at 4.2 K. It was found that two subbands in the inversion layer were filled with electrons, so that a model for the subband structure was presented. The experimental C-V data of this model and the structure of the subband system (including ground state energy, first excited state energy, Fermi level, depletion layer width and inversion layer width and their dependence on the electron concentration in the inversion layer were also described).