Excimer laser deposition of c-axis oriented Pb(Zr, Ti)O3 thin films on silicon substrates with direct-current glow discharge

Lirong Zheng; Xuhong Hu; Pingxiong Yang; W. Ping Xu; Chenglu Lin

doi:10.1557/JMR.1997.0164

Excimer laser deposition of c-axis oriented Pb(Zr, Ti)O₃ thin films on silicon substrates with direct-current glow discharge

Lirong Zheng, Xuhong Hu, Pingxiong Yang, W. Ping Xu, Chenglu Lin

CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Ferroelectric thin films of Pb(Zr, Ti)O₃ (PZT) were fabricated on platinum-coated silicon using the process of direct-current glow discharge assisted laser deposition, where the substrate was electrically grounded. The films deposited at 730 °C with +800 V discharge voltage are oriented mostly with the c-axis perpendicular to the substrate surface, and exhibit good ferroelectric hysteresis loops. A possible mechanism for the improvement of the deposition process has been proposed.

Original language	English
Pages (from-to)	1179-1182
Number of pages	4
Journal	Journal of Materials Research
Volume	12
Issue number	5
DOIs	https://doi.org/10.1557/JMR.1997.0164
State	Published - May 1997
Externally published	Yes

Access to Document

10.1557/JMR.1997.0164

Cite this

@article{89fcd1a7853a432ebf96cbc5e4b5283e,

title = "Excimer laser deposition of c-axis oriented Pb(Zr, Ti)O3 thin films on silicon substrates with direct-current glow discharge",

abstract = "Ferroelectric thin films of Pb(Zr, Ti)O3 (PZT) were fabricated on platinum-coated silicon using the process of direct-current glow discharge assisted laser deposition, where the substrate was electrically grounded. The films deposited at 730 °C with +800 V discharge voltage are oriented mostly with the c-axis perpendicular to the substrate surface, and exhibit good ferroelectric hysteresis loops. A possible mechanism for the improvement of the deposition process has been proposed.",

author = "Lirong Zheng and Xuhong Hu and Pingxiong Yang and Xu, \{W. Ping\} and Chenglu Lin",

year = "1997",

month = may,

doi = "10.1557/JMR.1997.0164",

language = "英语",

volume = "12",

pages = "1179--1182",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Springer International Publishing AG",

number = "5",

}

TY - JOUR

T1 - Excimer laser deposition of c-axis oriented Pb(Zr, Ti)O3 thin films on silicon substrates with direct-current glow discharge

AU - Zheng, Lirong

AU - Hu, Xuhong

AU - Yang, Pingxiong

AU - Xu, W. Ping

AU - Lin, Chenglu

PY - 1997/5

Y1 - 1997/5

N2 - Ferroelectric thin films of Pb(Zr, Ti)O3 (PZT) were fabricated on platinum-coated silicon using the process of direct-current glow discharge assisted laser deposition, where the substrate was electrically grounded. The films deposited at 730 °C with +800 V discharge voltage are oriented mostly with the c-axis perpendicular to the substrate surface, and exhibit good ferroelectric hysteresis loops. A possible mechanism for the improvement of the deposition process has been proposed.

AB - Ferroelectric thin films of Pb(Zr, Ti)O3 (PZT) were fabricated on platinum-coated silicon using the process of direct-current glow discharge assisted laser deposition, where the substrate was electrically grounded. The films deposited at 730 °C with +800 V discharge voltage are oriented mostly with the c-axis perpendicular to the substrate surface, and exhibit good ferroelectric hysteresis loops. A possible mechanism for the improvement of the deposition process has been proposed.

UR - https://www.scopus.com/pages/publications/0031142220

U2 - 10.1557/JMR.1997.0164

DO - 10.1557/JMR.1997.0164

M3 - 文章

AN - SCOPUS:0031142220

SN - 0884-2914

VL - 12

SP - 1179

EP - 1182

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 5

ER -

Excimer laser deposition of c-axis oriented Pb(Zr, Ti)O₃ thin films on silicon substrates with direct-current glow discharge

Abstract

Access to Document

Other files and links

Fingerprint

Cite this