Excellent thermal stability attributed to Cr dopant in Sb2Te phase change material

Cong Lin; Jing Hu; Tao Wei; Wanfei Li; Yun Ling; Qianqian Liu; Miao Cheng; Sannian Song; Zhitang Song; Yan Cheng; Yonghui Zheng; Bo Liu

doi:10.1016/j.matlet.2022.131977

Excellent thermal stability attributed to Cr dopant in Sb₂Te phase change material

Cong Lin, Jing Hu^*, Tao Wei, Wanfei Li, Yun Ling, Qianqian Liu, Miao Cheng, Sannian Song, Zhitang Song, Yan Cheng, Yonghui Zheng, Bo Liu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Herein, Cr was selected as the dopant to improve the performance of Sb₂Te in phase change random access memory (PCRAM). The thermal properties, crystal structure and chemical bonding state of the as-prepared Cr_0.39Sb₂Te (CST) were investigated. The CST containing 11.5At% Cr-dopant exhibited excellent performances including high crystallization temperature (218.6℃), good data retention (10 years @136.5 ± 1.0℃) and high stability with low-density change rate (2.8%). The switching speed up to 10 ns and the endurance nearly 1 × 10⁵ cycles were obtained for the CST based PCRAM cells. All these findings indicated that the CST material is a potential candidate for universal memory devices.

Original language	English
Article number	131977
Journal	Materials Letters
Volume	315
DOIs	https://doi.org/10.1016/j.matlet.2022.131977
State	Published - 15 May 2022

Keywords

Electrical properties
Phase transition
Thermal properties
Thin films

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10.1016/j.matlet.2022.131977

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@article{9a70cbdab9364c15ae2ebbe482f17a07,

title = "Excellent thermal stability attributed to Cr dopant in Sb2Te phase change material",

abstract = "Herein, Cr was selected as the dopant to improve the performance of Sb2Te in phase change random access memory (PCRAM). The thermal properties, crystal structure and chemical bonding state of the as-prepared Cr0.39Sb2Te (CST) were investigated. The CST containing 11.5At\% Cr-dopant exhibited excellent performances including high crystallization temperature (218.6℃), good data retention (10 years @136.5 ± 1.0℃) and high stability with low-density change rate (2.8\%). The switching speed up to 10 ns and the endurance nearly 1 × 105 cycles were obtained for the CST based PCRAM cells. All these findings indicated that the CST material is a potential candidate for universal memory devices.",

keywords = "Electrical properties, Phase transition, Thermal properties, Thin films",

author = "Cong Lin and Jing Hu and Tao Wei and Wanfei Li and Yun Ling and Qianqian Liu and Miao Cheng and Sannian Song and Zhitang Song and Yan Cheng and Yonghui Zheng and Bo Liu",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = may,

day = "15",

doi = "10.1016/j.matlet.2022.131977",

language = "英语",

volume = "315",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Excellent thermal stability attributed to Cr dopant in Sb2Te phase change material

AU - Lin, Cong

AU - Hu, Jing

AU - Wei, Tao

AU - Li, Wanfei

AU - Ling, Yun

AU - Liu, Qianqian

AU - Cheng, Miao

AU - Song, Sannian

AU - Song, Zhitang

AU - Cheng, Yan

AU - Zheng, Yonghui

AU - Liu, Bo

PY - 2022/5/15

Y1 - 2022/5/15

N2 - Herein, Cr was selected as the dopant to improve the performance of Sb2Te in phase change random access memory (PCRAM). The thermal properties, crystal structure and chemical bonding state of the as-prepared Cr0.39Sb2Te (CST) were investigated. The CST containing 11.5At% Cr-dopant exhibited excellent performances including high crystallization temperature (218.6℃), good data retention (10 years @136.5 ± 1.0℃) and high stability with low-density change rate (2.8%). The switching speed up to 10 ns and the endurance nearly 1 × 105 cycles were obtained for the CST based PCRAM cells. All these findings indicated that the CST material is a potential candidate for universal memory devices.

AB - Herein, Cr was selected as the dopant to improve the performance of Sb2Te in phase change random access memory (PCRAM). The thermal properties, crystal structure and chemical bonding state of the as-prepared Cr0.39Sb2Te (CST) were investigated. The CST containing 11.5At% Cr-dopant exhibited excellent performances including high crystallization temperature (218.6℃), good data retention (10 years @136.5 ± 1.0℃) and high stability with low-density change rate (2.8%). The switching speed up to 10 ns and the endurance nearly 1 × 105 cycles were obtained for the CST based PCRAM cells. All these findings indicated that the CST material is a potential candidate for universal memory devices.

KW - Electrical properties

KW - Phase transition

KW - Thermal properties

KW - Thin films

UR - https://www.scopus.com/pages/publications/85125881581

U2 - 10.1016/j.matlet.2022.131977

DO - 10.1016/j.matlet.2022.131977

M3 - 文章

AN - SCOPUS:85125881581

SN - 0167-577X

VL - 315

JO - Materials Letters

JF - Materials Letters

M1 - 131977

ER -

Excellent thermal stability attributed to Cr dopant in Sb₂Te phase change material

Abstract

Keywords

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