Evolution of Raman spectra in n-InAs wafer with annealing temperature

H. Y. Deng; J. H. Guo; Y. Zhang; R. Cong; G. J. Hu; G. L. Yu; N. Dai

doi:10.1016/j.apsusc.2013.09.095

Evolution of Raman spectra in n-InAs wafer with annealing temperature

H. Y. Deng^*
, J. H. Guo
, Y. Zhang
, R. Cong
, G. J. Hu
, G. L. Yu
, N. Dai

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The influence of annealing temperature on the optical properties of surface electron accumulation layers in n-type (1 0 0) InAs wafers has been investigated by Raman spectroscopy. It exhibits that Raman peaks due to scattering by unscreened LO phonons disappear with increasing temperature, which indicates that the electron accumulation layer in InAs surface is eliminated by annealing. The involved mechanism was analyzed by X-ray photoelectron spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that amorphous In ₂ O ₃ and As ₂ O ₃ phases are formed at InAs surface during annealing and, meanwhile, a thin crystalline As layer at the interface between the oxidized layer and the wafer is also generated which leads to a decrease in thickness of the surface electron accumulation layer since As adatoms introduce acceptor type surface states.

Original language	English
Pages (from-to)	40-43
Number of pages	4
Journal	Applied Surface Science
Volume	288
DOIs	https://doi.org/10.1016/j.apsusc.2013.09.095
State	Published - 1 Jan 2014
Externally published	Yes

Keywords

Annealing
InAs
Raman
Surface charge accumulation layer

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10.1016/j.apsusc.2013.09.095

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@article{a4a63e69e1bf4b4aa09d05923ef33f66,

title = "Evolution of Raman spectra in n-InAs wafer with annealing temperature",

abstract = " The influence of annealing temperature on the optical properties of surface electron accumulation layers in n-type (1 0 0) InAs wafers has been investigated by Raman spectroscopy. It exhibits that Raman peaks due to scattering by unscreened LO phonons disappear with increasing temperature, which indicates that the electron accumulation layer in InAs surface is eliminated by annealing. The involved mechanism was analyzed by X-ray photoelectron spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that amorphous In 2 O 3 and As 2 O 3 phases are formed at InAs surface during annealing and, meanwhile, a thin crystalline As layer at the interface between the oxidized layer and the wafer is also generated which leads to a decrease in thickness of the surface electron accumulation layer since As adatoms introduce acceptor type surface states.",

keywords = "Annealing, InAs, Raman, Surface charge accumulation layer",

author = "Deng, \{H. Y.\} and Guo, \{J. H.\} and Y. Zhang and R. Cong and Hu, \{G. J.\} and Yu, \{G. L.\} and N. Dai",

year = "2014",

month = jan,

day = "1",

doi = "10.1016/j.apsusc.2013.09.095",

language = "英语",

volume = "288",

pages = "40--43",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Evolution of Raman spectra in n-InAs wafer with annealing temperature

AU - Deng, H. Y.

AU - Guo, J. H.

AU - Zhang, Y.

AU - Cong, R.

AU - Hu, G. J.

AU - Yu, G. L.

AU - Dai, N.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The influence of annealing temperature on the optical properties of surface electron accumulation layers in n-type (1 0 0) InAs wafers has been investigated by Raman spectroscopy. It exhibits that Raman peaks due to scattering by unscreened LO phonons disappear with increasing temperature, which indicates that the electron accumulation layer in InAs surface is eliminated by annealing. The involved mechanism was analyzed by X-ray photoelectron spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that amorphous In 2 O 3 and As 2 O 3 phases are formed at InAs surface during annealing and, meanwhile, a thin crystalline As layer at the interface between the oxidized layer and the wafer is also generated which leads to a decrease in thickness of the surface electron accumulation layer since As adatoms introduce acceptor type surface states.

AB - The influence of annealing temperature on the optical properties of surface electron accumulation layers in n-type (1 0 0) InAs wafers has been investigated by Raman spectroscopy. It exhibits that Raman peaks due to scattering by unscreened LO phonons disappear with increasing temperature, which indicates that the electron accumulation layer in InAs surface is eliminated by annealing. The involved mechanism was analyzed by X-ray photoelectron spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that amorphous In 2 O 3 and As 2 O 3 phases are formed at InAs surface during annealing and, meanwhile, a thin crystalline As layer at the interface between the oxidized layer and the wafer is also generated which leads to a decrease in thickness of the surface electron accumulation layer since As adatoms introduce acceptor type surface states.

KW - Annealing

KW - InAs

KW - Raman

KW - Surface charge accumulation layer

UR - https://www.scopus.com/pages/publications/84888434493

U2 - 10.1016/j.apsusc.2013.09.095

DO - 10.1016/j.apsusc.2013.09.095

M3 - 文章

AN - SCOPUS:84888434493

SN - 0169-4332

VL - 288

SP - 40

EP - 43

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Evolution of Raman spectra in n-InAs wafer with annealing temperature

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Keywords

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