Evolution of microstructure and related properties of PbZr0.4 Ti0.6 O3 films on F-doped tin oxide with annealing temperature

T. Zhang; G. J. Hu; H. J. Bu; J. Wu; J. H. Chu; N. Dai

doi:10.1063/1.3388013

Evolution of microstructure and related properties of PbZr_0.4 Ti_0.6 O₃ films on F-doped tin oxide with annealing temperature

T. Zhang, G. J. Hu, H. J. Bu, J. Wu, J. H. Chu, N. Dai

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

PbZr_0.4 Ti_0.6 O₃ films were fabricated on glass slices coated with a layer of F-doped transparent conductive tin oxide layer by chemical solution deposition. The evolution of microstructures and related properties of the PbZr_0.4 Ti_0.6 O₃ films with annealing temperature were studied. The films show a perovskite phase and a crack-free surface morphology. The films annealed at >550 °C display a distinguishable layered structure consisting of dense and porous PbZr0.4 Ti0.6 O₃ layers. The sample treated at 650 °C exhibits the largest average remanent polarization of 29.2 μC/ cm² and peak reflectivity of 95% among the films. 650 °C appears to be the best processing condition for the growth of PbZr_0.4 Ti_0.6 O₃ multilayers with excellent ferroelectric and optical properties on F-doped tin oxide thin films.

Original language	English
Article number	084103
Journal	Journal of Applied Physics
Volume	107
Issue number	8
DOIs	https://doi.org/10.1063/1.3388013
State	Published - 15 Apr 2010
Externally published	Yes

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title = "Evolution of microstructure and related properties of PbZr0.4 Ti0.6 O3 films on F-doped tin oxide with annealing temperature",

abstract = "PbZr0.4 Ti0.6 O3 films were fabricated on glass slices coated with a layer of F-doped transparent conductive tin oxide layer by chemical solution deposition. The evolution of microstructures and related properties of the PbZr0.4 Ti0.6 O3 films with annealing temperature were studied. The films show a perovskite phase and a crack-free surface morphology. The films annealed at >550 °C display a distinguishable layered structure consisting of dense and porous PbZr0.4 Ti0.6 O3 layers. The sample treated at 650 °C exhibits the largest average remanent polarization of 29.2 μC/ cm2 and peak reflectivity of 95\% among the films. 650 °C appears to be the best processing condition for the growth of PbZr0.4 Ti0.6 O3 multilayers with excellent ferroelectric and optical properties on F-doped tin oxide thin films.",

author = "T. Zhang and Hu, \{G. J.\} and Bu, \{H. J.\} and J. Wu and Chu, \{J. H.\} and N. Dai",

year = "2010",

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doi = "10.1063/1.3388013",

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T1 - Evolution of microstructure and related properties of PbZr0.4 Ti0.6 O3 films on F-doped tin oxide with annealing temperature

AU - Zhang, T.

AU - Hu, G. J.

AU - Bu, H. J.

AU - Wu, J.

AU - Chu, J. H.

AU - Dai, N.

PY - 2010/4/15

Y1 - 2010/4/15

N2 - PbZr0.4 Ti0.6 O3 films were fabricated on glass slices coated with a layer of F-doped transparent conductive tin oxide layer by chemical solution deposition. The evolution of microstructures and related properties of the PbZr0.4 Ti0.6 O3 films with annealing temperature were studied. The films show a perovskite phase and a crack-free surface morphology. The films annealed at >550 °C display a distinguishable layered structure consisting of dense and porous PbZr0.4 Ti0.6 O3 layers. The sample treated at 650 °C exhibits the largest average remanent polarization of 29.2 μC/ cm2 and peak reflectivity of 95% among the films. 650 °C appears to be the best processing condition for the growth of PbZr0.4 Ti0.6 O3 multilayers with excellent ferroelectric and optical properties on F-doped tin oxide thin films.

AB - PbZr0.4 Ti0.6 O3 films were fabricated on glass slices coated with a layer of F-doped transparent conductive tin oxide layer by chemical solution deposition. The evolution of microstructures and related properties of the PbZr0.4 Ti0.6 O3 films with annealing temperature were studied. The films show a perovskite phase and a crack-free surface morphology. The films annealed at >550 °C display a distinguishable layered structure consisting of dense and porous PbZr0.4 Ti0.6 O3 layers. The sample treated at 650 °C exhibits the largest average remanent polarization of 29.2 μC/ cm2 and peak reflectivity of 95% among the films. 650 °C appears to be the best processing condition for the growth of PbZr0.4 Ti0.6 O3 multilayers with excellent ferroelectric and optical properties on F-doped tin oxide thin films.

UR - https://www.scopus.com/pages/publications/77952337665

U2 - 10.1063/1.3388013

DO - 10.1063/1.3388013

M3 - 文章

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SN - 0021-8979

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Evolution of microstructure and related properties of PbZr_0.4 Ti_0.6 O₃ films on F-doped tin oxide with annealing temperature

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