Evolution of infrared photoreflectance lineshape with temperature in narrow-gap HgCdTe epilayers

Jun Shao; Lili Ma; Xiang Lü; Wei Lu; Jun Wu; F. X. Zha; Y. F. Wei; Z. F. Li; S. L. Guo; J. R. Yang; Li He; J. H. Chu

doi:10.1063/1.2996030

Evolution of infrared photoreflectance lineshape with temperature in narrow-gap HgCdTe epilayers

Jun Shao, Lili Ma, Xiang Lü, Wei Lu, Jun Wu, F. X. Zha, Y. F. Wei, Z. F. Li, S. L. Guo, J. R. Yang, Li He, J. H. Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Temperature-dependent (11-290 K) infrared photoreflectance (PR) measurements are performed on as-grown arsenic-doped HgCdTe epilayers in a midinfrared spectral region. Main PR features near bandedge manifest clear evolution of lineshape with temperature, of which the fittings identify besides a band-band process several below-gap processes. Analyses show that these features are due to photomodulation-induced screening of donor-acceptor pairs and photomodulation of band- impurity and band-band reflectance, their intensities correlate to the joint concentration of the involved energetic states. Temperature-dependent infrared PR may be a right optical spectroscopy for identifying impurity levels in semiconductors such as HgCdTe with high-density impurities.

Original language	English
Article number	131914
Journal	Applied Physics Letters
Volume	93
Issue number	13
DOIs	https://doi.org/10.1063/1.2996030
State	Published - 2008

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@article{275a6fbe1a374d82abcfe8c4ba07032c,

title = "Evolution of infrared photoreflectance lineshape with temperature in narrow-gap HgCdTe epilayers",

abstract = "Temperature-dependent (11-290 K) infrared photoreflectance (PR) measurements are performed on as-grown arsenic-doped HgCdTe epilayers in a midinfrared spectral region. Main PR features near bandedge manifest clear evolution of lineshape with temperature, of which the fittings identify besides a band-band process several below-gap processes. Analyses show that these features are due to photomodulation-induced screening of donor-acceptor pairs and photomodulation of band- impurity and band-band reflectance, their intensities correlate to the joint concentration of the involved energetic states. Temperature-dependent infrared PR may be a right optical spectroscopy for identifying impurity levels in semiconductors such as HgCdTe with high-density impurities.",

author = "Jun Shao and Lili Ma and Xiang L{\"u} and Wei Lu and Jun Wu and Zha, \{F. X.\} and Wei, \{Y. F.\} and Li, \{Z. F.\} and Guo, \{S. L.\} and Yang, \{J. R.\} and Li He and Chu, \{J. H.\}",

year = "2008",

doi = "10.1063/1.2996030",

language = "英语",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Evolution of infrared photoreflectance lineshape with temperature in narrow-gap HgCdTe epilayers

AU - Shao, Jun

AU - Ma, Lili

AU - Lü, Xiang

AU - Lu, Wei

AU - Wu, Jun

AU - Zha, F. X.

AU - Wei, Y. F.

AU - Li, Z. F.

AU - Guo, S. L.

AU - Yang, J. R.

AU - He, Li

AU - Chu, J. H.

PY - 2008

Y1 - 2008

N2 - Temperature-dependent (11-290 K) infrared photoreflectance (PR) measurements are performed on as-grown arsenic-doped HgCdTe epilayers in a midinfrared spectral region. Main PR features near bandedge manifest clear evolution of lineshape with temperature, of which the fittings identify besides a band-band process several below-gap processes. Analyses show that these features are due to photomodulation-induced screening of donor-acceptor pairs and photomodulation of band- impurity and band-band reflectance, their intensities correlate to the joint concentration of the involved energetic states. Temperature-dependent infrared PR may be a right optical spectroscopy for identifying impurity levels in semiconductors such as HgCdTe with high-density impurities.

AB - Temperature-dependent (11-290 K) infrared photoreflectance (PR) measurements are performed on as-grown arsenic-doped HgCdTe epilayers in a midinfrared spectral region. Main PR features near bandedge manifest clear evolution of lineshape with temperature, of which the fittings identify besides a band-band process several below-gap processes. Analyses show that these features are due to photomodulation-induced screening of donor-acceptor pairs and photomodulation of band- impurity and band-band reflectance, their intensities correlate to the joint concentration of the involved energetic states. Temperature-dependent infrared PR may be a right optical spectroscopy for identifying impurity levels in semiconductors such as HgCdTe with high-density impurities.

UR - https://www.scopus.com/pages/publications/53349173994

U2 - 10.1063/1.2996030

DO - 10.1063/1.2996030

M3 - 文章

AN - SCOPUS:53349173994

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131914

ER -

Evolution of infrared photoreflectance lineshape with temperature in narrow-gap HgCdTe epilayers

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