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Evolution of Filament Formation in Ni/HfO2/SiOx/Si-Based RRAM Devices

  • Xing Wu
  • , Sen Mei
  • , Michel Bosman
  • , Nagarajan Raghavan
  • , Xixiang Zhang
  • , Dongkyu Cha
  • , Kun Li
  • , Kin Leong Pey*
  • *Corresponding author for this work
  • Singapore University of Technology and Design
  • Agency for Science, Technology and Research, Singapore
  • King Abdullah University of Science and Technology

Research output: Contribution to journal › Article › peer-review

Original languageEnglish
Article number1500130
JournalAdvanced Electronic Materials
Volume1
Issue number11
DOIs
StatePublished - Nov 2015

Keywords

  • energy dispersive X-ray spectrometry
  • in situ transmission electron microscopy
  • metal nanofilaments
  • resistive random access memory

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