Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

Nagarajan Raghavan; Kin Leong Pey; Wenhu Liu; Xing Wu; Xiang Li; Michel Bosman

doi:10.1016/j.mee.2011.03.027

Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

Nagarajan Raghavan, Kin Leong Pey, Wenhu Liu, Xing Wu, Xiang Li, Michel Bosman

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

We present electrical evidence on asymmetric metal-insulator-semiconductor (MIS) based test structures in support of the presence of two different independent switching mechanisms in a resistive random access memory (RRAM) device. The valid mechanism for switching depends on the compliance capping (I_gl) for forming/SET transition. Our results convincingly show that low compliance based switching only involves reversible oxygen ion drift to and from oxygen gettering gate electrodes, while high compliance switching involves formation and rupture of conductive metallic nanofilaments, as verified further by our physical analysis investigations. We have observed this unique dual mode switching mechanism only in NiSi-based gate electrodes, which have a moderate oxygen solubility as well as relatively low melting point.

Original language	English
Pages (from-to)	1124-1128
Number of pages	5
Journal	Microelectronic Engineering
Volume	88
Issue number	7
DOIs	https://doi.org/10.1016/j.mee.2011.03.027
State	Published - Jul 2011
Externally published	Yes

Keywords

Bipolar switching
Metal filament
Oxygen vacancy
Resistive random access memory (RRAM)
Unipolar switching

Access to Document

10.1016/j.mee.2011.03.027

Cite this

@article{591c048293b44b54b95bfe4a583b5e09,

title = "Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM",

abstract = "We present electrical evidence on asymmetric metal-insulator-semiconductor (MIS) based test structures in support of the presence of two different independent switching mechanisms in a resistive random access memory (RRAM) device. The valid mechanism for switching depends on the compliance capping (Igl) for forming/SET transition. Our results convincingly show that low compliance based switching only involves reversible oxygen ion drift to and from oxygen gettering gate electrodes, while high compliance switching involves formation and rupture of conductive metallic nanofilaments, as verified further by our physical analysis investigations. We have observed this unique dual mode switching mechanism only in NiSi-based gate electrodes, which have a moderate oxygen solubility as well as relatively low melting point.",

keywords = "Bipolar switching, Metal filament, Oxygen vacancy, Resistive random access memory (RRAM), Unipolar switching",

author = "Nagarajan Raghavan and Pey, \{Kin Leong\} and Wenhu Liu and Xing Wu and Xiang Li and Michel Bosman",

year = "2011",

month = jul,

doi = "10.1016/j.mee.2011.03.027",

language = "英语",

volume = "88",

pages = "1124--1128",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "7",

}

TY - JOUR

T1 - Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

AU - Raghavan, Nagarajan

AU - Pey, Kin Leong

AU - Liu, Wenhu

AU - Wu, Xing

AU - Li, Xiang

AU - Bosman, Michel

PY - 2011/7

Y1 - 2011/7

N2 - We present electrical evidence on asymmetric metal-insulator-semiconductor (MIS) based test structures in support of the presence of two different independent switching mechanisms in a resistive random access memory (RRAM) device. The valid mechanism for switching depends on the compliance capping (Igl) for forming/SET transition. Our results convincingly show that low compliance based switching only involves reversible oxygen ion drift to and from oxygen gettering gate electrodes, while high compliance switching involves formation and rupture of conductive metallic nanofilaments, as verified further by our physical analysis investigations. We have observed this unique dual mode switching mechanism only in NiSi-based gate electrodes, which have a moderate oxygen solubility as well as relatively low melting point.

AB - We present electrical evidence on asymmetric metal-insulator-semiconductor (MIS) based test structures in support of the presence of two different independent switching mechanisms in a resistive random access memory (RRAM) device. The valid mechanism for switching depends on the compliance capping (Igl) for forming/SET transition. Our results convincingly show that low compliance based switching only involves reversible oxygen ion drift to and from oxygen gettering gate electrodes, while high compliance switching involves formation and rupture of conductive metallic nanofilaments, as verified further by our physical analysis investigations. We have observed this unique dual mode switching mechanism only in NiSi-based gate electrodes, which have a moderate oxygen solubility as well as relatively low melting point.

KW - Bipolar switching

KW - Metal filament

KW - Oxygen vacancy

KW - Resistive random access memory (RRAM)

KW - Unipolar switching

UR - https://www.scopus.com/pages/publications/79958050325

U2 - 10.1016/j.mee.2011.03.027

DO - 10.1016/j.mee.2011.03.027

M3 - 文章

AN - SCOPUS:79958050325

SN - 0167-9317

VL - 88

SP - 1124

EP - 1128

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7

ER -

Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this