Evaluation of densities and mobilities for heavy and light holes in p-type Hg_1-xCd_xTe molecular beam epitaxy films from magnetic-field-dependent Hall data

The densities and mobilities of heavy and light holes have been simultaneously determined at various temperatures (1.2-300 K) in two molecular beam epitaxy-grown p-type Hg_1-xCd_xTe (x = 0.224) samples from variable magnetic-field Hall measurements. The separation of the contribution from the light hole and heavy hole was achieved by a hybrid approach consisting of mobility spectrum analysis followed by a multicarrier fitting procedure. An acceptor energy level at ̃ 13 meV above the valence band, as well as various mass ratios of light to heavy holes for different temperature were obtained. In addition, the minority carrier (electron) and the surface two-dimensional electron concentrations and mobilities have also been derived as a function of temperature. The explicit experimental values obtained in this work should be useful to physics and modeling of HgCdTe infrared detectors.