TY - JOUR
T1 - Etching of new phase change material Ti 0.5 Sb 2 Te 3 by Cl 2 /Ar and CF 4 /Ar inductively coupled plasmas
AU - Zhang, Zhonghua
AU - Song, Sannian
AU - Song, Zhitang
AU - Cheng, Yan
AU - Zhu, Min
AU - Li, Xiaoyun
AU - Zhu, Yueqin
AU - Guo, Xiaohui
AU - Yin, Weijun
AU - Wu, Liangcai
AU - Liu, Bo
AU - Feng, Songlin
AU - Zhou, Dong
PY - 2014/8/30
Y1 - 2014/8/30
N2 - The etching characteristics of new phase change material Ti 0.5 Sb 2 Te 3 (TST) were studied with the Cl 2 /Ar or CF 4 /Ar gas mixture using inductively coupled plasmas system. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. Furthermore, X-ray photoelectron spectroscopy (XPS) compositional depth profiling was used to determine the surface degradation of etched TST using Cl 2 /Ar and CF 4 /Ar gas mixture. The etched TST shows a shift of the peaks related to Sb and Te to a higher energy for both etching gas, indicating the surface degradation of TST after etching. TST etched by Cl 2 shows a thicker chloride layer remaining on the etched surface than fluorinate layer etched by CF 4 owing to the higher reactivity. In the case of CF 4 , a thinner C-F polymer layer was observed on the etched surface, indicating lower etch rate due to the difficulty in making F diffusion into the TST through the C-F layer.
AB - The etching characteristics of new phase change material Ti 0.5 Sb 2 Te 3 (TST) were studied with the Cl 2 /Ar or CF 4 /Ar gas mixture using inductively coupled plasmas system. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. Furthermore, X-ray photoelectron spectroscopy (XPS) compositional depth profiling was used to determine the surface degradation of etched TST using Cl 2 /Ar and CF 4 /Ar gas mixture. The etched TST shows a shift of the peaks related to Sb and Te to a higher energy for both etching gas, indicating the surface degradation of TST after etching. TST etched by Cl 2 shows a thicker chloride layer remaining on the etched surface than fluorinate layer etched by CF 4 owing to the higher reactivity. In the case of CF 4 , a thinner C-F polymer layer was observed on the etched surface, indicating lower etch rate due to the difficulty in making F diffusion into the TST through the C-F layer.
KW - Etching
KW - ICP
KW - Phase change material
KW - Ti-Sb-Te
UR - https://www.scopus.com/pages/publications/84903378508
U2 - 10.1016/j.apsusc.2014.05.002
DO - 10.1016/j.apsusc.2014.05.002
M3 - 文章
AN - SCOPUS:84903378508
SN - 0169-4332
VL - 311
SP - 68
EP - 73
JO - Applied Surface Science
JF - Applied Surface Science
ER -