| Original language | English |
|---|---|
| Pages (from-to) | 901 |
| Number of pages | 1 |
| Journal | Solid State Communications |
| Volume | 150 |
| Issue number | 17-18 |
| DOIs |
|
| State | Published - May 2010 |
| Externally published | Yes |
Erratum to "Gate-controlled electron-electron interactions in an In0 : 53 Ga0 : 47 As/InP quantum well structure" [Solid State Commun. 150 (2010) 251-253] (DOI:10.1016/j.ssc.2009.11.016)
Y. M. Zhou, K. H. Gao, G. Yu, W. Z. Zhou, T. Lin, S. L. Guo, J. H. Chu, N. Dai
Research output: Contribution to journal › Comment/debate