Erratum: Mechanism of the performance improvement of TiO 2-x-based field-effect transistor using SiO2 as gate insulator (AIP Advances (2011) 1 (032167))

Ni Zhong; Hisashi Shima; Hiro Akinaga

doi:10.1063/1.3660334

Erratum: Mechanism of the performance improvement of TiO _2-x-based field-effect transistor using SiO₂ as gate insulator (AIP Advances (2011) 1 (032167))

Ni Zhong^*
, Hisashi Shima
, Hiro Akinaga

^*Corresponding author for this work

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	49902
Journal	AIP Advances
Volume	1
Issue number	4
DOIs	https://doi.org/10.1063/1.3660334
State	Published - Dec 2011
Externally published	Yes

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10.1063/1.3660334

Cite this

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AU - Akinaga, Hiro

PY - 2011/12

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Erratum: Mechanism of the performance improvement of TiO 2-x-based field-effect transistor using SiO2 as gate insulator (AIP Advances (2011) 1 (032167))

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Erratum: Mechanism of the performance improvement of TiO _2-x-based field-effect transistor using SiO₂ as gate insulator (AIP Advances (2011) 1 (032167))