Erratum: Mechanism of the performance improvement of TiO 2-x-based field-effect transistor using SiO2 as gate insulator (AIP Advances (2011) 1 (032167))

Ni Zhong; Hisashi Shima; Hiro Akinaga

doi:10.1063/1.3660334

Erratum: Mechanism of the performance improvement of TiO _2-x-based field-effect transistor using SiO₂ as gate insulator (AIP Advances (2011) 1 (032167))

Ni Zhong^*
, Hisashi Shima
, Hiro Akinaga

^*Corresponding author for this work

National Institute of Advanced Industrial Science and Technology
Japan Science and Technology Agency

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	49902
Journal	AIP Advances
Volume	1
Issue number	4
DOIs	https://doi.org/10.1063/1.3660334
State	Published - Dec 2011
Externally published	Yes

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10.1063/1.3660334

Cite this

@article{d1c28b82f6a54940859b9acff4cf983a,

title = "Erratum: Mechanism of the performance improvement of TiO 2-x-based field-effect transistor using SiO2 as gate insulator (AIP Advances (2011) 1 (032167))",

author = "Ni Zhong and Hisashi Shima and Hiro Akinaga",

year = "2011",

month = dec,

doi = "10.1063/1.3660334",

language = "英语",

volume = "1",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Erratum

T2 - Mechanism of the performance improvement of TiO 2-x-based field-effect transistor using SiO2 as gate insulator (AIP Advances (2011) 1 (032167))

AU - Zhong, Ni

AU - Shima, Hisashi

AU - Akinaga, Hiro

PY - 2011/12

Y1 - 2011/12

UR - https://www.scopus.com/pages/publications/84855396602

U2 - 10.1063/1.3660334

DO - 10.1063/1.3660334

M3 - 评论/辩论

AN - SCOPUS:84855396602

SN - 2158-3226

VL - 1

JO - AIP Advances

JF - AIP Advances

IS - 4

M1 - 49902

ER -

Erratum: Mechanism of the performance improvement of TiO 2-x-based field-effect transistor using SiO2 as gate insulator (AIP Advances (2011) 1 (032167))

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Erratum: Mechanism of the performance improvement of TiO _2-x-based field-effect transistor using SiO₂ as gate insulator (AIP Advances (2011) 1 (032167))