Erratum: Excited-state lifetime measurement of silicon vacancy centers in diamond by single-photon frequency upconversion (Laser Physics (2018) 28 (055401) DOI: 10.1088/1555-6611/aaa02f)

  • Youying Rong
  • , Jianhui Ma
  • , Lingxiao Chen
  • , Yan Liu
  • , Petr Siyushev
  • , Botao Wu
  • , Haifeng Pan
  • , Fedor Jelezko
  • , E. Wu
  • , Heping Zeng

Research output: Contribution to journalComment/debate

Abstract

The following errors were made in the article ,Excited-state lifetime measurement of silicon vacancy centers in diamond by single-photon frequency upconversion (2018 Laser Phys. 28 055401), of the authors of ,Youying Rong, Jianhui Ma, Lingxiao Chen, Yan Liu, Petr Siyushev, Botao Wu, Haifeng Pan, Fedor Jelezko, E Wu and Heping Zeng, through the fault of the authors: (a) In line 24 on the page 3, the phrase ,wave plates were focused by an achromatic lens into a 20 mm, should be replaced by ,wave plates were focused by an achromatic lens into a 25 mm,. (b) In line 75 on the page 3, the phrase ,The PPLN2 crystal with length of 20 mm used in the, should be replaced by ,The PPLN2 crystal with length of 25 mm used in the,. (c) In line 8 on the page 4, the phrase ,about 2.65 × 103 ps m−1. For a pump pulse duration of 11 ps, should be replaced by ,about 253 ps m−1. For a pump pulse duration of 11 ps,. (d) In line 9 on the page 4, the phrase ,at 1064.2 nm, the walkoff length is calculated to be 4.2 mm, should be replaced by ,at 1064.2 nm, the walk-off length is calculated to be 43.5 mm,. (e) In line 10 on the page 4, the phrase ,Since the length of the PPLN crystal is 20 mm, the walk-off, should be replaced by ,Since the length of the PPLN crystal is 25 mm, the walk-off,. (f) In line 11 on the page 4, the phrase ,time τW is about 53 ps, which is significantly shorter than the, should be replaced by ,time τW is about 6.3 ps, which is significantly shorter than the,. (g) In line 15 on the page 4, the phrase ,walk-off time, which is 54 ps, and the real excited-state life-, should be replaced by ,walk-off time, which is ~12.7 ps, and the real excitedstate life-,. (h) In line 16 on the page 4, the phrase ,time τ of the SiV emitter should be 0.753 ns according to, should be replaced by ,time τ of the SiV emitter should be 0.755 ns according to,. (i) On the page 4, the text ,τ = 0.755±0.071 ns, in figure 4 should be replaced by ,τD = 0.755±0.071 ns,.

Original languageEnglish
Article number049501
JournalLaser Physics
Volume30
Issue number4
DOIs
StatePublished - Apr 2020

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