Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure

Q. Q. Meng*, H. Wang, B. Gao, C. Y. Liu, K. S. Ang, X. Guo, J. Gao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data.

Original languageEnglish
Title of host publication2014 Asia Communications and Photonics Conference, ACP 2014 - Proceedings
PublisherOSA - The Optical Society
ISBN (Electronic)9781557528520
StatePublished - Nov 2014
Event2014 Asia Communications and Photonics Conference, ACP 2014 - Shanghai, China
Duration: 11 Nov 201414 Nov 2014

Publication series

NameAsia Communications and Photonics Conference, ACP
Volume2014-November
ISSN (Print)2162-108X

Conference

Conference2014 Asia Communications and Photonics Conference, ACP 2014
Country/TerritoryChina
CityShanghai
Period11/11/1414/11/14

Fingerprint

Dive into the research topics of 'Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure'. Together they form a unique fingerprint.

Cite this