Equivalent circuit model for InP-based uni-traveling-carrier photodiodes with dipole-doped structure

  • Q. Q. Meng*
  • , H. Wang
  • , B. Gao
  • , C. Y. Liu
  • , K. S. Ang
  • , X. Guo
  • , J. Gao
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

An equivalent circuit model has been proposed to analyze the high performance of InPbased uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data.

Original languageEnglish
Title of host publicationAsia Communications and Photonics Conference, ACPC 2014
PublisherOptical Society of America (OSA)
ISBN (Electronic)9781557528520
DOIs
StatePublished - 14 Nov 2014
EventAsia Communications and Photonics Conference, ACPC 2014 - Shanghai, China
Duration: 11 Nov 201414 Nov 2014

Publication series

NameAsia Communications and Photonics Conference, ACPC 2014

Conference

ConferenceAsia Communications and Photonics Conference, ACPC 2014
Country/TerritoryChina
CityShanghai
Period11/11/1414/11/14

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