Epitaxy of silicon on porous silicon by ultra vacuum electron beam evaporator

Wei Li Liu; Xin Zhong Duo; Miao Zhang; Qin Wo Shen; Lian Wei Wang; Cheng Lu Lin; Jian Hao Zhu

Epitaxy of silicon on porous silicon by ultra vacuum electron beam evaporator

Wei Li Liu^*
, Xin Zhong Duo
, Miao Zhang
, Qin Wo Shen
, Lian Wei Wang
, Cheng Lu Lin
, Jian Hao Zhu

^*Corresponding author for this work

CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Epitaxial silicon with high quality has been successfully grown on porous silicon by ultra-vacuum electron beam evaporator. The effect of porosity of porous silicon on epitaxy was also studied. High energy electron diffraction (HREED), cross-section transition electron microscopy (XTEM), atomic force microscopy (AFM), Rutherford backscattering and channeling spectroscopy (RBS/C) were used to analyze the quality of epitaxial layer. And spreading resistance probe (SRP) was also used to measure the electrical properties of samples. The results show that the epitaxial silicon on porous silicon, which was made in the electrolyte HF: ethanol=1:1 at the current density 10 mA/cm² for 10 min without illumination, exhibits good quality.

Original language	English
Pages (from-to)	612-613+619
Journal	Gongneng Cailiao/Journal of Functional Materials
Volume	32
Issue number	6
State	Published - Dec 2001
Externally published	Yes

Keywords

Crystal silicon
Epitaxy
Porous silicon
Ultra-vacuum electron beam evaporation

Cite this

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title = "Epitaxy of silicon on porous silicon by ultra vacuum electron beam evaporator",

abstract = "Epitaxial silicon with high quality has been successfully grown on porous silicon by ultra-vacuum electron beam evaporator. The effect of porosity of porous silicon on epitaxy was also studied. High energy electron diffraction (HREED), cross-section transition electron microscopy (XTEM), atomic force microscopy (AFM), Rutherford backscattering and channeling spectroscopy (RBS/C) were used to analyze the quality of epitaxial layer. And spreading resistance probe (SRP) was also used to measure the electrical properties of samples. The results show that the epitaxial silicon on porous silicon, which was made in the electrolyte HF: ethanol=1:1 at the current density 10 mA/cm2 for 10 min without illumination, exhibits good quality.",

keywords = "Crystal silicon, Epitaxy, Porous silicon, Ultra-vacuum electron beam evaporation",

author = "Liu, \{Wei Li\} and Duo, \{Xin Zhong\} and Miao Zhang and Shen, \{Qin Wo\} and Wang, \{Lian Wei\} and Lin, \{Cheng Lu\} and Zhu, \{Jian Hao\}",

year = "2001",

month = dec,

language = "英语",

volume = "32",

pages = "612--613+619",

journal = "Gongneng Cailiao/Journal of Functional Materials",

issn = "1001-9731",

publisher = "Journal of Functional Materials",

number = "6",

}

TY - JOUR

T1 - Epitaxy of silicon on porous silicon by ultra vacuum electron beam evaporator

AU - Liu, Wei Li

AU - Duo, Xin Zhong

AU - Zhang, Miao

AU - Shen, Qin Wo

AU - Wang, Lian Wei

AU - Lin, Cheng Lu

AU - Zhu, Jian Hao

PY - 2001/12

Y1 - 2001/12

N2 - Epitaxial silicon with high quality has been successfully grown on porous silicon by ultra-vacuum electron beam evaporator. The effect of porosity of porous silicon on epitaxy was also studied. High energy electron diffraction (HREED), cross-section transition electron microscopy (XTEM), atomic force microscopy (AFM), Rutherford backscattering and channeling spectroscopy (RBS/C) were used to analyze the quality of epitaxial layer. And spreading resistance probe (SRP) was also used to measure the electrical properties of samples. The results show that the epitaxial silicon on porous silicon, which was made in the electrolyte HF: ethanol=1:1 at the current density 10 mA/cm2 for 10 min without illumination, exhibits good quality.

AB - Epitaxial silicon with high quality has been successfully grown on porous silicon by ultra-vacuum electron beam evaporator. The effect of porosity of porous silicon on epitaxy was also studied. High energy electron diffraction (HREED), cross-section transition electron microscopy (XTEM), atomic force microscopy (AFM), Rutherford backscattering and channeling spectroscopy (RBS/C) were used to analyze the quality of epitaxial layer. And spreading resistance probe (SRP) was also used to measure the electrical properties of samples. The results show that the epitaxial silicon on porous silicon, which was made in the electrolyte HF: ethanol=1:1 at the current density 10 mA/cm2 for 10 min without illumination, exhibits good quality.

KW - Crystal silicon

KW - Epitaxy

KW - Porous silicon

KW - Ultra-vacuum electron beam evaporation

UR - https://www.scopus.com/pages/publications/0035565040

M3 - 文章

AN - SCOPUS:0035565040

SN - 1001-9731

VL - 32

SP - 612-613+619

JO - Gongneng Cailiao/Journal of Functional Materials

JF - Gongneng Cailiao/Journal of Functional Materials

IS - 6

ER -

Epitaxy of silicon on porous silicon by ultra vacuum electron beam evaporator

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