TY - JOUR
T1 - Epitaxially grown β-SiC on Si in the CH4H2 system by hot filament chemical vapour deposition
AU - Sun, Z.
AU - Sun, Y.
AU - Wang, X.
AU - Zheng, Z.
PY - 1995/11
Y1 - 1995/11
N2 - β-SiC thin films were deposited on silicon substrates by hot filament chemical vapour deposition from methane diluted with hydrogen. Under deposition conditions with a CH4: H2 ratio of 0.5%, filament temperature of 2200-2400 °C, gas pressure of 10 kPa and distance between filament and substrate of 2-8 mm, if the substrate temperature is between 700 and 1000 °C, diamond films were deposited, while if the temperature is between 1000 and 1200 °C, only silicon carbide (β-SiC) films were heteroepitaxially deposited. The morphology and structure of the films were characterized by scanning electron microscopy, X-ray diffraction and Raman spectroscopy, and a model of SiC growth is proposed.
AB - β-SiC thin films were deposited on silicon substrates by hot filament chemical vapour deposition from methane diluted with hydrogen. Under deposition conditions with a CH4: H2 ratio of 0.5%, filament temperature of 2200-2400 °C, gas pressure of 10 kPa and distance between filament and substrate of 2-8 mm, if the substrate temperature is between 700 and 1000 °C, diamond films were deposited, while if the temperature is between 1000 and 1200 °C, only silicon carbide (β-SiC) films were heteroepitaxially deposited. The morphology and structure of the films were characterized by scanning electron microscopy, X-ray diffraction and Raman spectroscopy, and a model of SiC growth is proposed.
KW - Chemical vapour deposition
KW - Epitaxy of thin films
KW - Silicon
KW - Silicon carbide
UR - https://www.scopus.com/pages/publications/0029409465
U2 - 10.1016/0921-5107(95)01244-3
DO - 10.1016/0921-5107(95)01244-3
M3 - 文章
AN - SCOPUS:0029409465
SN - 0921-5107
VL - 34
SP - L13-L16
JO - Materials Science and Engineering: B
JF - Materials Science and Engineering: B
IS - 2-3
ER -