Epitaxially grown β-SiC on Si in the CH4H2 system by hot filament chemical vapour deposition

Z. Sun; Y. Sun; X. Wang; Z. Zheng

doi:10.1016/0921-5107(95)01244-3

Epitaxially grown β-SiC on Si in the CH4H2 system by hot filament chemical vapour deposition

Z. Sun^*
, Y. Sun
, X. Wang
, Z. Zheng

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

β-SiC thin films were deposited on silicon substrates by hot filament chemical vapour deposition from methane diluted with hydrogen. Under deposition conditions with a CH₄: H₂ ratio of 0.5%, filament temperature of 2200-2400 °C, gas pressure of 10 kPa and distance between filament and substrate of 2-8 mm, if the substrate temperature is between 700 and 1000 °C, diamond films were deposited, while if the temperature is between 1000 and 1200 °C, only silicon carbide (β-SiC) films were heteroepitaxially deposited. The morphology and structure of the films were characterized by scanning electron microscopy, X-ray diffraction and Raman spectroscopy, and a model of SiC growth is proposed.

Original language	English
Pages (from-to)	L13-L16
Journal	Materials Science and Engineering: B
Volume	34
Issue number	2-3
DOIs	https://doi.org/10.1016/0921-5107(95)01244-3
State	Published - Nov 1995

Keywords

Chemical vapour deposition
Epitaxy of thin films
Silicon
Silicon carbide

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10.1016/0921-5107(95)01244-3

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title = "Epitaxially grown β-SiC on Si in the CH4H2 system by hot filament chemical vapour deposition",

abstract = "β-SiC thin films were deposited on silicon substrates by hot filament chemical vapour deposition from methane diluted with hydrogen. Under deposition conditions with a CH4: H2 ratio of 0.5\%, filament temperature of 2200-2400 °C, gas pressure of 10 kPa and distance between filament and substrate of 2-8 mm, if the substrate temperature is between 700 and 1000 °C, diamond films were deposited, while if the temperature is between 1000 and 1200 °C, only silicon carbide (β-SiC) films were heteroepitaxially deposited. The morphology and structure of the films were characterized by scanning electron microscopy, X-ray diffraction and Raman spectroscopy, and a model of SiC growth is proposed.",

keywords = "Chemical vapour deposition, Epitaxy of thin films, Silicon, Silicon carbide",

author = "Z. Sun and Y. Sun and X. Wang and Z. Zheng",

year = "1995",

month = nov,

doi = "10.1016/0921-5107(95)01244-3",

language = "英语",

volume = "34",

pages = "L13--L16",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier Ltd",

number = "2-3",

}

TY - JOUR

T1 - Epitaxially grown β-SiC on Si in the CH4H2 system by hot filament chemical vapour deposition

AU - Sun, Z.

AU - Sun, Y.

AU - Wang, X.

AU - Zheng, Z.

PY - 1995/11

Y1 - 1995/11

N2 - β-SiC thin films were deposited on silicon substrates by hot filament chemical vapour deposition from methane diluted with hydrogen. Under deposition conditions with a CH4: H2 ratio of 0.5%, filament temperature of 2200-2400 °C, gas pressure of 10 kPa and distance between filament and substrate of 2-8 mm, if the substrate temperature is between 700 and 1000 °C, diamond films were deposited, while if the temperature is between 1000 and 1200 °C, only silicon carbide (β-SiC) films were heteroepitaxially deposited. The morphology and structure of the films were characterized by scanning electron microscopy, X-ray diffraction and Raman spectroscopy, and a model of SiC growth is proposed.

AB - β-SiC thin films were deposited on silicon substrates by hot filament chemical vapour deposition from methane diluted with hydrogen. Under deposition conditions with a CH4: H2 ratio of 0.5%, filament temperature of 2200-2400 °C, gas pressure of 10 kPa and distance between filament and substrate of 2-8 mm, if the substrate temperature is between 700 and 1000 °C, diamond films were deposited, while if the temperature is between 1000 and 1200 °C, only silicon carbide (β-SiC) films were heteroepitaxially deposited. The morphology and structure of the films were characterized by scanning electron microscopy, X-ray diffraction and Raman spectroscopy, and a model of SiC growth is proposed.

KW - Chemical vapour deposition

KW - Epitaxy of thin films

KW - Silicon

KW - Silicon carbide

UR - https://www.scopus.com/pages/publications/0029409465

U2 - 10.1016/0921-5107(95)01244-3

DO - 10.1016/0921-5107(95)01244-3

M3 - 文章

AN - SCOPUS:0029409465

SN - 0921-5107

VL - 34

SP - L13-L16

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 2-3

ER -

Epitaxially grown β-SiC on Si in the CH4H2 system by hot filament chemical vapour deposition

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Keywords

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