Skip to main navigation Skip to search Skip to main content

Epitaxial integration of a nanoscale BiFeO3 phase boundary with silicon

  • Wen I. Liang
  • , Chun Yen Peng
  • , Rong Huang
  • , Wei Cheng Kuo
  • , Yen Chin Huang
  • , Carolina Adamo
  • , Yi Chun Chen
  • , Li Chang
  • , Jenh Yih Juang
  • , Darrel G. Schlom
  • , Ying Hao Chu*
  • *Corresponding author for this work
  • National Yang Ming Chiao Tung University
  • Japan Fine Ceramics Center
  • National Cheng Kung University
  • Stanford University
  • Cornell University
  • Academia Sinica - Institute of Physics

Research output: Contribution to journalArticlepeer-review

Abstract

The successful integration of the strain-driven nanoscale phase boundary of BiFeO3 onto a silicon substrate is demonstrated with extraordinary ferroelectricity and ferromagnetism. The detailed strain history is delineated through a reciprocal space mapping technique. We have found that a distorted monoclinic phase forms prior to a tetragonal-like phase, a phenomenon which may correlates with the thermal strain induced during the growth process.

Original languageEnglish
Pages (from-to)1322-1326
Number of pages5
JournalNanoscale
Volume8
Issue number3
DOIs
StatePublished - 21 Jan 2016

Fingerprint

Dive into the research topics of 'Epitaxial integration of a nanoscale BiFeO3 phase boundary with silicon'. Together they form a unique fingerprint.

Cite this