Epitaxial growth and band alignment of p-NiO/n-Fe                         2                         O                         3                          heterojunction on Al                         2                         O                         3                         (0 0 0 1)

Y. X. Qin; Z. Z. Yang; J. J. Wang; Z. Y. Xie; M. Y. Cui; C. M. Tian; Y. G. Du; K. H.L. Zhang

doi:10.1016/j.apsusc.2018.09.106

Epitaxial growth and band alignment of p-NiO/n-Fe ₂ O ₃ heterojunction on Al ₂ O ₃ (0 0 0 1)

Y. X. Qin, Z. Z. Yang, J. J. Wang, Z. Y. Xie, M. Y. Cui, C. M. Tian, Y. G. Du, K. H.L. Zhang

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Fe ₂ O ₃ is one of the promising oxide semiconductors as photoanodes for photoelectrochemical water splitting, but its efficiency is still limited by the short diffusion length of photo-excited carriers. Using the internal electric field formed at a p-n heterojunction (HJ) is an efficient strategy to mitigate such limitation. Accordingly, the interfacial atomic structure and band alignment are the most crucial parameters for efficiency optimization. In this work, we report on the epitaxial growth and determination of the band energy alignment of NiO/Fe ₂ O ₃ p-n heterojunction grown on Al ₂ O ₃ (0 0 0 1) substrate by pulsed laser deposition. We show that high crystalline quality NiO(1 1 1) thin films can be grown on Fe ₂ O ₃ (0 0 0 1) with epitaxial relationships of 1¯11 _NiO ||0001¯ _Fe2O3 (out-of-plane), 1¯1¯0 _NiO ||011¯0 _Fe2O3 and 1¯12¯ _NiO ||21¯1¯0 _Fe2O3 (in-plane). The rotation of NiO hexagons by 30° can effectively reduce the lattice mismatch from ∼17.4% to ∼1.58%. High resolution X-ray photoelectron spectroscopy reveals that valence and conduction band offset of NiO/Fe ₂ O ₃ heterojunction are 0.6 eV and 2.2 eV, respectively. Furthermore, our results also indicate that the energy level of Ni 3d is higher than the valence band maximum of Fe ₂ O ₃ . This kind of interfacial electronic structure not only facilitates the charge separation, but lowers the overpotentials for oxygen evolution reaction.

Original language	English
Pages (from-to)	488-493
Number of pages	6
Journal	Applied Surface Science
Volume	464
DOIs	https://doi.org/10.1016/j.apsusc.2018.09.106
State	Published - 15 Jan 2019
Externally published	Yes

Keywords

Band offset
Electronic structure
Fe O
Heterojunction
Oxide semiconductor
Photoelectrochemical water splitting

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.apsusc.2018.09.106

Cite this

Qin, Y. X., Yang, Z. Z., Wang, J. J., Xie, Z. Y., Cui, M. Y., Tian, C. M., Du, Y. G., & Zhang, K. H. L. (2019). Epitaxial growth and band alignment of p-NiO/n-Fe ₂ O ₃ heterojunction on Al ₂ O ₃ (0 0 0 1) Applied Surface Science, 464, 488-493. https://doi.org/10.1016/j.apsusc.2018.09.106

Qin, Y. X. ; Yang, Z. Z. ; Wang, J. J. et al. / Epitaxial growth and band alignment of p-NiO/n-Fe ₂ O ₃ heterojunction on Al ₂ O ₃ (0 0 0 1) In: Applied Surface Science. 2019 ; Vol. 464. pp. 488-493.

@article{a1e085a0665642558ceaeea9c2282ccd,

title = " Epitaxial growth and band alignment of p-NiO/n-Fe 2 O 3 heterojunction on Al 2 O 3 (0 0 0 1) ",

abstract = " Fe 2 O 3 is one of the promising oxide semiconductors as photoanodes for photoelectrochemical water splitting, but its efficiency is still limited by the short diffusion length of photo-excited carriers. Using the internal electric field formed at a p-n heterojunction (HJ) is an efficient strategy to mitigate such limitation. Accordingly, the interfacial atomic structure and band alignment are the most crucial parameters for efficiency optimization. In this work, we report on the epitaxial growth and determination of the band energy alignment of NiO/Fe 2 O 3 p-n heterojunction grown on Al 2 O 3 (0 0 0 1) substrate by pulsed laser deposition. We show that high crystalline quality NiO(1 1 1) thin films can be grown on Fe 2 O 3 (0 0 0 1) with epitaxial relationships of 1¯11 NiO ||0001¯ Fe2O3 (out-of-plane), 1¯1¯0 NiO ||011¯0 Fe2O3 and 1¯12¯ NiO ||21¯1¯0 Fe2O3 (in-plane). The rotation of NiO hexagons by 30° can effectively reduce the lattice mismatch from ∼17.4\% to ∼1.58\%. High resolution X-ray photoelectron spectroscopy reveals that valence and conduction band offset of NiO/Fe 2 O 3 heterojunction are 0.6 eV and 2.2 eV, respectively. Furthermore, our results also indicate that the energy level of Ni 3d is higher than the valence band maximum of Fe 2 O 3 . This kind of interfacial electronic structure not only facilitates the charge separation, but lowers the overpotentials for oxygen evolution reaction.",

keywords = "Band offset, Electronic structure, Fe O, Heterojunction, Oxide semiconductor, Photoelectrochemical water splitting",

author = "Qin, \{Y. X.\} and Yang, \{Z. Z.\} and Wang, \{J. J.\} and Xie, \{Z. Y.\} and Cui, \{M. Y.\} and Tian, \{C. M.\} and Du, \{Y. G.\} and Zhang, \{K. H.L.\}",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2019",

month = jan,

day = "15",

doi = "10.1016/j.apsusc.2018.09.106",

language = "英语",

volume = "464",

pages = "488--493",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

Qin, YX, Yang, ZZ, Wang, JJ, Xie, ZY, Cui, MY, Tian, CM, Du, YG & Zhang, KHL 2019, ' Epitaxial growth and band alignment of p-NiO/n-Fe ₂ O ₃ heterojunction on Al ₂ O ₃ (0 0 0 1) ', Applied Surface Science, vol. 464, pp. 488-493. https://doi.org/10.1016/j.apsusc.2018.09.106

Epitaxial growth and band alignment of p-NiO/n-Fe ₂ O ₃ heterojunction on Al ₂ O ₃ (0 0 0 1) . / Qin, Y. X.; Yang, Z. Z.; Wang, J. J. et al.
In: Applied Surface Science, Vol. 464, 15.01.2019, p. 488-493.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Epitaxial growth and band alignment of p-NiO/n-Fe 2 O 3 heterojunction on Al 2 O 3 (0 0 0 1)

AU - Qin, Y. X.

AU - Yang, Z. Z.

AU - Wang, J. J.

AU - Xie, Z. Y.

AU - Cui, M. Y.

AU - Tian, C. M.

AU - Du, Y. G.

AU - Zhang, K. H.L.

PY - 2019/1/15

Y1 - 2019/1/15

N2 - Fe 2 O 3 is one of the promising oxide semiconductors as photoanodes for photoelectrochemical water splitting, but its efficiency is still limited by the short diffusion length of photo-excited carriers. Using the internal electric field formed at a p-n heterojunction (HJ) is an efficient strategy to mitigate such limitation. Accordingly, the interfacial atomic structure and band alignment are the most crucial parameters for efficiency optimization. In this work, we report on the epitaxial growth and determination of the band energy alignment of NiO/Fe 2 O 3 p-n heterojunction grown on Al 2 O 3 (0 0 0 1) substrate by pulsed laser deposition. We show that high crystalline quality NiO(1 1 1) thin films can be grown on Fe 2 O 3 (0 0 0 1) with epitaxial relationships of 1¯11 NiO ||0001¯ Fe2O3 (out-of-plane), 1¯1¯0 NiO ||011¯0 Fe2O3 and 1¯12¯ NiO ||21¯1¯0 Fe2O3 (in-plane). The rotation of NiO hexagons by 30° can effectively reduce the lattice mismatch from ∼17.4% to ∼1.58%. High resolution X-ray photoelectron spectroscopy reveals that valence and conduction band offset of NiO/Fe 2 O 3 heterojunction are 0.6 eV and 2.2 eV, respectively. Furthermore, our results also indicate that the energy level of Ni 3d is higher than the valence band maximum of Fe 2 O 3 . This kind of interfacial electronic structure not only facilitates the charge separation, but lowers the overpotentials for oxygen evolution reaction.

AB - Fe 2 O 3 is one of the promising oxide semiconductors as photoanodes for photoelectrochemical water splitting, but its efficiency is still limited by the short diffusion length of photo-excited carriers. Using the internal electric field formed at a p-n heterojunction (HJ) is an efficient strategy to mitigate such limitation. Accordingly, the interfacial atomic structure and band alignment are the most crucial parameters for efficiency optimization. In this work, we report on the epitaxial growth and determination of the band energy alignment of NiO/Fe 2 O 3 p-n heterojunction grown on Al 2 O 3 (0 0 0 1) substrate by pulsed laser deposition. We show that high crystalline quality NiO(1 1 1) thin films can be grown on Fe 2 O 3 (0 0 0 1) with epitaxial relationships of 1¯11 NiO ||0001¯ Fe2O3 (out-of-plane), 1¯1¯0 NiO ||011¯0 Fe2O3 and 1¯12¯ NiO ||21¯1¯0 Fe2O3 (in-plane). The rotation of NiO hexagons by 30° can effectively reduce the lattice mismatch from ∼17.4% to ∼1.58%. High resolution X-ray photoelectron spectroscopy reveals that valence and conduction band offset of NiO/Fe 2 O 3 heterojunction are 0.6 eV and 2.2 eV, respectively. Furthermore, our results also indicate that the energy level of Ni 3d is higher than the valence band maximum of Fe 2 O 3 . This kind of interfacial electronic structure not only facilitates the charge separation, but lowers the overpotentials for oxygen evolution reaction.

KW - Band offset

KW - Electronic structure

KW - Fe O

KW - Heterojunction

KW - Oxide semiconductor

KW - Photoelectrochemical water splitting

UR - https://www.scopus.com/pages/publications/85053383461

U2 - 10.1016/j.apsusc.2018.09.106

DO - 10.1016/j.apsusc.2018.09.106

M3 - 文章

AN - SCOPUS:85053383461

SN - 0169-4332

VL - 464

SP - 488

EP - 493

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Qin YX, Yang ZZ, Wang JJ, Xie ZY, Cui MY, Tian CM et al. Epitaxial growth and band alignment of p-NiO/n-Fe ₂ O ₃ heterojunction on Al ₂ O ₃ (0 0 0 1) Applied Surface Science. 2019 Jan 15;464:488-493. doi: 10.1016/j.apsusc.2018.09.106

Epitaxial growth and band alignment of p-NiO/n-Fe ₂ O ₃ heterojunction on Al ₂ O ₃ (0 0 0 1)

Abstract

Keywords

UN SDGs

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Cite this

Epitaxial growth and band alignment of p-NiO/n-Fe 2 O 3 heterojunction on Al 2 O 3 (0 0 0 1)

Abstract

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this

Epitaxial growth and band alignment of p-NiO/n-Fe ₂ O ₃ heterojunction on Al ₂ O ₃ (0 0 0 1)