Enhancement of perpendicular magnetic anisotropy in Co/Ni multilayers by in situ annealing the Ta/Cu under-layers

Di Wu; Shaohai Chen; Zongzhi Zhang; B. Ma; Q. Y. Jin

doi:10.1063/1.4841695

Enhancement of perpendicular magnetic anisotropy in Co/Ni multilayers by in situ annealing the Ta/Cu under-layers

Di Wu
, Shaohai Chen
, Zongzhi Zhang^*
, B. Ma
, Q. Y. Jin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The perpendicular magnetic properties of glass/Ta/Cu/[Co/Ni]₄/Ta multilayers can be efficiently tuned by in situ pre-annealing the Ta/Cu under-layers at various temperatures (T_Cu) before the deposition of the Co/Ni stack. As a result of the co-effect of fcc(111) texture and Cu surface roughness, the perpendicular anisotropy K_u and coercivity H _c⊥ exhibit a similar non-monotonous dependence on the T _Cu, showing minimum values at T_Cu = 100 °C and maxima at 400 °C for K_u while at 550 °C for H_c⊥. By in situ annealing the under-layers at 550 °C and then post-annealing the whole stack at 250 °C, the H_c⊥ value can be significantly enhanced from 139 Oe up to 620 Oe, which is important for spintronic applications.

Original language	English
Article number	242401
Journal	Applied Physics Letters
Volume	103
Issue number	24
DOIs	https://doi.org/10.1063/1.4841695
State	Published - 9 Dec 2013
Externally published	Yes

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@article{42c479ea50724989b4f2fa87f5699151,

title = "Enhancement of perpendicular magnetic anisotropy in Co/Ni multilayers by in situ annealing the Ta/Cu under-layers",

abstract = "The perpendicular magnetic properties of glass/Ta/Cu/[Co/Ni]4/Ta multilayers can be efficiently tuned by in situ pre-annealing the Ta/Cu under-layers at various temperatures (TCu) before the deposition of the Co/Ni stack. As a result of the co-effect of fcc(111) texture and Cu surface roughness, the perpendicular anisotropy Ku and coercivity H c⊥ exhibit a similar non-monotonous dependence on the T Cu, showing minimum values at TCu = 100 °C and maxima at 400 °C for Ku while at 550 °C for Hc⊥. By in situ annealing the under-layers at 550 °C and then post-annealing the whole stack at 250 °C, the Hc⊥ value can be significantly enhanced from 139 Oe up to 620 Oe, which is important for spintronic applications.",

author = "Di Wu and Shaohai Chen and Zongzhi Zhang and B. Ma and Jin, \{Q. Y.\}",

year = "2013",

month = dec,

day = "9",

doi = "10.1063/1.4841695",

language = "英语",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Enhancement of perpendicular magnetic anisotropy in Co/Ni multilayers by in situ annealing the Ta/Cu under-layers

AU - Wu, Di

AU - Chen, Shaohai

AU - Zhang, Zongzhi

AU - Ma, B.

AU - Jin, Q. Y.

PY - 2013/12/9

Y1 - 2013/12/9

N2 - The perpendicular magnetic properties of glass/Ta/Cu/[Co/Ni]4/Ta multilayers can be efficiently tuned by in situ pre-annealing the Ta/Cu under-layers at various temperatures (TCu) before the deposition of the Co/Ni stack. As a result of the co-effect of fcc(111) texture and Cu surface roughness, the perpendicular anisotropy Ku and coercivity H c⊥ exhibit a similar non-monotonous dependence on the T Cu, showing minimum values at TCu = 100 °C and maxima at 400 °C for Ku while at 550 °C for Hc⊥. By in situ annealing the under-layers at 550 °C and then post-annealing the whole stack at 250 °C, the Hc⊥ value can be significantly enhanced from 139 Oe up to 620 Oe, which is important for spintronic applications.

AB - The perpendicular magnetic properties of glass/Ta/Cu/[Co/Ni]4/Ta multilayers can be efficiently tuned by in situ pre-annealing the Ta/Cu under-layers at various temperatures (TCu) before the deposition of the Co/Ni stack. As a result of the co-effect of fcc(111) texture and Cu surface roughness, the perpendicular anisotropy Ku and coercivity H c⊥ exhibit a similar non-monotonous dependence on the T Cu, showing minimum values at TCu = 100 °C and maxima at 400 °C for Ku while at 550 °C for Hc⊥. By in situ annealing the under-layers at 550 °C and then post-annealing the whole stack at 250 °C, the Hc⊥ value can be significantly enhanced from 139 Oe up to 620 Oe, which is important for spintronic applications.

UR - https://www.scopus.com/pages/publications/84890470435

U2 - 10.1063/1.4841695

DO - 10.1063/1.4841695

M3 - 文章

AN - SCOPUS:84890470435

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242401

ER -

Enhancement of perpendicular magnetic anisotropy in Co/Ni multilayers by in situ annealing the Ta/Cu under-layers

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