Enhancement of Curie temperature under low electric fields in Mn selectively δ -doped GaAsAlGaAs wide quantum wells

Bin Lv; Jiqing Wang; Jianguo Yu; Huibing Mao; Ye Shen; Ziqiang Zhu; Huaizhong Xing

doi:10.1063/1.2720352

Enhancement of Curie temperature under low electric fields in Mn selectively δ -doped GaAsAlGaAs wide quantum wells

Bin Lv
, Jiqing Wang^*
, Jianguo Yu
, Huibing Mao
, Ye Shen
, Ziqiang Zhu
, Huaizhong Xing

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A prominent improvement of Curie temperature under low electric fields through Mn δ -doped GaAsp-AlGaAs wide quantum wells is presented theoretically. The electric-field-controlled Curie temperature for different δ -doping positions and well widths has been investigated by means of the numerical self-consistent calculation. For quantum wells with 40 nm well width, an applied electric field of 0.3 meVnm enhances TC up to five times than ones without the applied field. Our results indicate that wide quantum wells (>20 nm) have more advantage than narrow quantum wells in the electric-field- controlled low dimensional ferromagnetic systems.

Original language	English
Article number	142513
Journal	Applied Physics Letters
Volume	90
Issue number	14
DOIs	https://doi.org/10.1063/1.2720352
State	Published - 2007

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title = "Enhancement of Curie temperature under low electric fields in Mn selectively δ -doped GaAsAlGaAs wide quantum wells",

abstract = "A prominent improvement of Curie temperature under low electric fields through Mn δ -doped GaAsp-AlGaAs wide quantum wells is presented theoretically. The electric-field-controlled Curie temperature for different δ -doping positions and well widths has been investigated by means of the numerical self-consistent calculation. For quantum wells with 40 nm well width, an applied electric field of 0.3 meVnm enhances TC up to five times than ones without the applied field. Our results indicate that wide quantum wells (>20 nm) have more advantage than narrow quantum wells in the electric-field- controlled low dimensional ferromagnetic systems.",

author = "Bin Lv and Jiqing Wang and Jianguo Yu and Huibing Mao and Ye Shen and Ziqiang Zhu and Huaizhong Xing",

year = "2007",

doi = "10.1063/1.2720352",

language = "英语",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

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TY - JOUR

T1 - Enhancement of Curie temperature under low electric fields in Mn selectively δ -doped GaAsAlGaAs wide quantum wells

AU - Lv, Bin

AU - Wang, Jiqing

AU - Yu, Jianguo

AU - Mao, Huibing

AU - Shen, Ye

AU - Zhu, Ziqiang

AU - Xing, Huaizhong

PY - 2007

Y1 - 2007

N2 - A prominent improvement of Curie temperature under low electric fields through Mn δ -doped GaAsp-AlGaAs wide quantum wells is presented theoretically. The electric-field-controlled Curie temperature for different δ -doping positions and well widths has been investigated by means of the numerical self-consistent calculation. For quantum wells with 40 nm well width, an applied electric field of 0.3 meVnm enhances TC up to five times than ones without the applied field. Our results indicate that wide quantum wells (>20 nm) have more advantage than narrow quantum wells in the electric-field- controlled low dimensional ferromagnetic systems.

AB - A prominent improvement of Curie temperature under low electric fields through Mn δ -doped GaAsp-AlGaAs wide quantum wells is presented theoretically. The electric-field-controlled Curie temperature for different δ -doping positions and well widths has been investigated by means of the numerical self-consistent calculation. For quantum wells with 40 nm well width, an applied electric field of 0.3 meVnm enhances TC up to five times than ones without the applied field. Our results indicate that wide quantum wells (>20 nm) have more advantage than narrow quantum wells in the electric-field- controlled low dimensional ferromagnetic systems.

UR - https://www.scopus.com/pages/publications/34047252704

U2 - 10.1063/1.2720352

DO - 10.1063/1.2720352

M3 - 文章

AN - SCOPUS:34047252704

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142513

ER -

Enhancement of Curie temperature under low electric fields in Mn selectively δ -doped GaAsAlGaAs wide quantum wells

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