Enhancement and stability of photoluminescence from Si nanocrystals embedded in a SiO                         2                          matrix by H                         2                         -passivation

Yanli Li; Peipei Liang; Zhigao Hu; Shuang Guo; Qinghu You; Jian Sun; Ning Xu; Jiada Wu

doi:10.1016/j.apsusc.2014.02.047

Enhancement and stability of photoluminescence from Si nanocrystals embedded in a SiO ₂ matrix by H ₂ -passivation

Yanli Li
, Peipei Liang
, Zhigao Hu
, Shuang Guo
, Qinghu You
, Jian Sun
, Ning Xu
, Jiada Wu^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Si nanocrystals embedded in SiO ₂ (Si-NCs/SiO ₂ ) with efficient light emission were prepared by N ₂ -annealing of amorphous SiO _x (a-SiO _x ) and subsequent H ₂ -passivation, and the effects of passivation on the photoluminescence (PL) from Si-NCs/SiO ₂ were studied. The H ₂ -passivation was performed in a mixed gas of 5% H ₂ + 95% N ₂ at temperatures ranging from 400 to 700 C for varied times, which is effective for passivating dangling bonds and enhancing luminescence. The PL intensity increases with passivation time, shortly followed by a saturation that depends on the passivation temperature. The H ₂ -passivation also results in a red shift of PL spectra. The effects of H ₂ -passivation show nearly complete reversibility as revealed by the emitted luminescence. Subsequent heating of the passivated samples in N ₂ has an effect of depassivation which regenerates dangling bonds and the regenerated dangling bonds can also be passivated. Si-NCs/SiO ₂ are found to exhibit stable behaviors in passivation and depassivation processes after three cycles of passivation and depassivation treatments.

Original language	English
Pages (from-to)	178-183
Number of pages	6
Journal	Applied Surface Science
Volume	300
DOIs	https://doi.org/10.1016/j.apsusc.2014.02.047
State	Published - 1 May 2014

Keywords

Depassivation
Passivation
Photoluminescence
Si nanocrystal
Stability

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10.1016/j.apsusc.2014.02.047

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Li, Y., Liang, P., Hu, Z., Guo, S., You, Q., Sun, J., Xu, N., & Wu, J. (2014). Enhancement and stability of photoluminescence from Si nanocrystals embedded in a SiO ₂ matrix by H ₂ -passivation Applied Surface Science, 300, 178-183. https://doi.org/10.1016/j.apsusc.2014.02.047

@article{5a21377f3cb14dc78c46003859d8f76c,

title = " Enhancement and stability of photoluminescence from Si nanocrystals embedded in a SiO 2 matrix by H 2 -passivation ",

abstract = " Si nanocrystals embedded in SiO 2 (Si-NCs/SiO 2 ) with efficient light emission were prepared by N 2 -annealing of amorphous SiO x (a-SiO x ) and subsequent H 2 -passivation, and the effects of passivation on the photoluminescence (PL) from Si-NCs/SiO 2 were studied. The H 2 -passivation was performed in a mixed gas of 5\% H 2 + 95\% N 2 at temperatures ranging from 400 to 700 C for varied times, which is effective for passivating dangling bonds and enhancing luminescence. The PL intensity increases with passivation time, shortly followed by a saturation that depends on the passivation temperature. The H 2 -passivation also results in a red shift of PL spectra. The effects of H 2 -passivation show nearly complete reversibility as revealed by the emitted luminescence. Subsequent heating of the passivated samples in N 2 has an effect of depassivation which regenerates dangling bonds and the regenerated dangling bonds can also be passivated. Si-NCs/SiO 2 are found to exhibit stable behaviors in passivation and depassivation processes after three cycles of passivation and depassivation treatments.",

keywords = "Depassivation, Passivation, Photoluminescence, Si nanocrystal, Stability",

author = "Yanli Li and Peipei Liang and Zhigao Hu and Shuang Guo and Qinghu You and Jian Sun and Ning Xu and Jiada Wu",

year = "2014",

month = may,

day = "1",

doi = "10.1016/j.apsusc.2014.02.047",

language = "英语",

volume = "300",

pages = "178--183",

journal = "Applied Surface Science",

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}

Li, Y, Liang, P, Hu, Z, Guo, S, You, Q, Sun, J, Xu, N & Wu, J 2014, ' Enhancement and stability of photoluminescence from Si nanocrystals embedded in a SiO ₂ matrix by H ₂ -passivation ', Applied Surface Science, vol. 300, pp. 178-183. https://doi.org/10.1016/j.apsusc.2014.02.047

Enhancement and stability of photoluminescence from Si nanocrystals embedded in a SiO ₂ matrix by H ₂ -passivation . / Li, Yanli; Liang, Peipei; Hu, Zhigao et al.
In: Applied Surface Science, Vol. 300, 01.05.2014, p. 178-183.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Enhancement and stability of photoluminescence from Si nanocrystals embedded in a SiO 2 matrix by H 2 -passivation

AU - Li, Yanli

AU - Liang, Peipei

AU - Hu, Zhigao

AU - Guo, Shuang

AU - You, Qinghu

AU - Sun, Jian

AU - Xu, Ning

AU - Wu, Jiada

PY - 2014/5/1

Y1 - 2014/5/1

N2 - Si nanocrystals embedded in SiO 2 (Si-NCs/SiO 2 ) with efficient light emission were prepared by N 2 -annealing of amorphous SiO x (a-SiO x ) and subsequent H 2 -passivation, and the effects of passivation on the photoluminescence (PL) from Si-NCs/SiO 2 were studied. The H 2 -passivation was performed in a mixed gas of 5% H 2 + 95% N 2 at temperatures ranging from 400 to 700 C for varied times, which is effective for passivating dangling bonds and enhancing luminescence. The PL intensity increases with passivation time, shortly followed by a saturation that depends on the passivation temperature. The H 2 -passivation also results in a red shift of PL spectra. The effects of H 2 -passivation show nearly complete reversibility as revealed by the emitted luminescence. Subsequent heating of the passivated samples in N 2 has an effect of depassivation which regenerates dangling bonds and the regenerated dangling bonds can also be passivated. Si-NCs/SiO 2 are found to exhibit stable behaviors in passivation and depassivation processes after three cycles of passivation and depassivation treatments.

AB - Si nanocrystals embedded in SiO 2 (Si-NCs/SiO 2 ) with efficient light emission were prepared by N 2 -annealing of amorphous SiO x (a-SiO x ) and subsequent H 2 -passivation, and the effects of passivation on the photoluminescence (PL) from Si-NCs/SiO 2 were studied. The H 2 -passivation was performed in a mixed gas of 5% H 2 + 95% N 2 at temperatures ranging from 400 to 700 C for varied times, which is effective for passivating dangling bonds and enhancing luminescence. The PL intensity increases with passivation time, shortly followed by a saturation that depends on the passivation temperature. The H 2 -passivation also results in a red shift of PL spectra. The effects of H 2 -passivation show nearly complete reversibility as revealed by the emitted luminescence. Subsequent heating of the passivated samples in N 2 has an effect of depassivation which regenerates dangling bonds and the regenerated dangling bonds can also be passivated. Si-NCs/SiO 2 are found to exhibit stable behaviors in passivation and depassivation processes after three cycles of passivation and depassivation treatments.

KW - Depassivation

KW - Passivation

KW - Photoluminescence

KW - Si nanocrystal

KW - Stability

UR - https://www.scopus.com/pages/publications/84896490390

U2 - 10.1016/j.apsusc.2014.02.047

DO - 10.1016/j.apsusc.2014.02.047

M3 - 文章

AN - SCOPUS:84896490390

SN - 0169-4332

VL - 300

SP - 178

EP - 183

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Li Y, Liang P, Hu Z, Guo S, You Q, Sun J et al. Enhancement and stability of photoluminescence from Si nanocrystals embedded in a SiO ₂ matrix by H ₂ -passivation Applied Surface Science. 2014 May 1;300:178-183. doi: 10.1016/j.apsusc.2014.02.047

Enhancement and stability of photoluminescence from Si nanocrystals embedded in a SiO ₂ matrix by H ₂ -passivation

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