Enhancement and anisotropy of the Landau g factor in modulation-doped Al0.22Ga0.78N/GaN heterostructures

  • Z. W. Zheng
  • , B. Shen*
  • , Y. S. Gui
  • , Z. J. Qiu
  • , C. P. Jiang
  • , N. Tang
  • , J. Liu
  • , D. J. Chen
  • , H. M. Zhou
  • , R. Zhang
  • , Y. Shi
  • , Y. D. Zheng
  • , S. L. Quo
  • , J. H. Chu
  • , K. Hoshino
  • , Y. Arakawa
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The spin splitting study of the two-dimensional electron gas (2DEG) for analyzing the enhancement and anisotropy of the Landau g factor in modulation-doped AlGaN/GaN heterostructures was presented. The study measured the magnetotransport properties at low temperatures and high magnetic fields. At magnetic field higher than 5.4 T and a temperature of 1.4 K, the spin splitting was observed in Shubnikov-de Hass oscillations. The ratio of the transverse effective and longitudinal effective g factor indicated large differences between the transverse and longitudinal g factors. The polarization-induced electric field at the heterointerface was found to be the cause behind the anisotropy of the Landau g factor.

Original languageEnglish
Pages (from-to)2473-2476
Number of pages4
JournalJournal of Applied Physics
Volume95
Issue number5
DOIs
StatePublished - 1 Mar 2004
Externally publishedYes

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