Enhanced stress-invariance of magnetization direction in magnetic thin films

Spin valve devices, consisting of a free magnetic layer, a spacer layer, and a pinned magnetic layer, are widely used in magnetic sensors and nonvolatile magnetic memories. However, even a slight bending deformation can affect the magnetization direction of the free magnetic layer, which will change the magnetoresistance signal of the devices. Therefore, it is a challenge to develop a flexible spin valve device with controllable performance. Here, an enhanced stress-invariance of the magnetization direction in amorphous CoFeB magnetic films on flexible polyimide substrates is achieved. The uniaxial anisotropy is induced by growing on the bent substrate under a magnetic field, which aligns more magnetic domains with easy axes along the direction perpendicular to the subsequently applied stress. Theoretical calculations indicate that pre-induced anisotropy with an easy axis perpendicular to the applied stress effectively resists the change in the magnetization direction during bending. These results are of importance for realizing better performance of flexible spin valve devices and the development of flexible spintronics.