TY - JOUR
T1 - Enhanced Spin-Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films
AU - Zhang, Jingying
AU - Jiang, Zhiyao
AU - Li, Ziyang
AU - Song, Yiwen
AU - Zhang, Jiali
AU - Jin, Qingyuan
AU - Liu, Yaowen
AU - Zhang, Zongzhi
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024/5/28
Y1 - 2024/5/28
N2 - In this study, significant modulations of perpendicular magnetic anisotropy, spin-orbit torque (SOT) efficiency (ξSH), and magnetic damping have been achieved in Pt/Co/Ta films after inserting an insulating NiO underlayer. As the NiO thickness (tNiO) varies from 0 to 2 nm, ξSH exhibits a nonmonotonic variation trend, initially increasing and then decreasing after reaching a maximum value at tNiO = 1 nm. The maximum SOT efficiency is as high as 0.60, nearly twice as large as that in the sample without NiO. Based on the NiO thickness dependencies of effective perpendicular anisotropy field and magnetic damping factor, we can conclude that the complex variation in ξSH is attributable to the combined effects of modified interfacial orbital hybridization and spin absorption by the NiO layer. Significantly, the latter is identified as the primary enhancement mechanism at tNiO < 1 nm, as it prevents spins with adverse polarization from reflecting back to the magnetic layer. Our findings demonstrate an alternative approach toward high SOT efficiency by engineering heterostructures with a magnetic insulator underlayer, which may play a powerful role in developing advanced energy-efficient spintronic devices.
AB - In this study, significant modulations of perpendicular magnetic anisotropy, spin-orbit torque (SOT) efficiency (ξSH), and magnetic damping have been achieved in Pt/Co/Ta films after inserting an insulating NiO underlayer. As the NiO thickness (tNiO) varies from 0 to 2 nm, ξSH exhibits a nonmonotonic variation trend, initially increasing and then decreasing after reaching a maximum value at tNiO = 1 nm. The maximum SOT efficiency is as high as 0.60, nearly twice as large as that in the sample without NiO. Based on the NiO thickness dependencies of effective perpendicular anisotropy field and magnetic damping factor, we can conclude that the complex variation in ξSH is attributable to the combined effects of modified interfacial orbital hybridization and spin absorption by the NiO layer. Significantly, the latter is identified as the primary enhancement mechanism at tNiO < 1 nm, as it prevents spins with adverse polarization from reflecting back to the magnetic layer. Our findings demonstrate an alternative approach toward high SOT efficiency by engineering heterostructures with a magnetic insulator underlayer, which may play a powerful role in developing advanced energy-efficient spintronic devices.
KW - magnetic damping
KW - magnetization switching
KW - orbital hybridization
KW - perpendicular magnetic anisotropy
KW - spin absorption
KW - spin−orbit torque
UR - https://www.scopus.com/pages/publications/85193702941
U2 - 10.1021/acsaelm.4c00521
DO - 10.1021/acsaelm.4c00521
M3 - 文章
AN - SCOPUS:85193702941
SN - 2637-6113
VL - 6
SP - 3908
EP - 3914
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 5
ER -