Enhanced solar-blind ultraviolet single-photon detection with a Geiger-mode silicon avalanche photodiode

Yafan Shi; Zhaohui Li; Baicheng Feng; Peiqin Yan; Bingcheng Du; Hui Zhou; Haifeng Pan; Guang Wu

doi:10.3788/COL201614.030401

Enhanced solar-blind ultraviolet single-photon detection with a Geiger-mode silicon avalanche photodiode

Yafan Shi
, Zhaohui Li
, Baicheng Feng
, Peiqin Yan
, Bingcheng Du
, Hui Zhou
, Haifeng Pan
, Guang Wu^*

^*Corresponding author for this work

East China Normal University
CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Solar-blind ultraviolet detection is of great importance in astronomy and industrial and military applications. Here, we report enhanced solar-blind ultraviolet single-photon detection by a normal silicon avalanche photodiode (Si APD) single-photon detector with a specially designed photon-collecting device. By re-focusing the reflected photon from the Si chip surface on the detection area by the aluminum-coated hemisphere, the detection efficiency of the Si APD at 280 nm can be improved to 4.62%. This system has the potential for high-efficiency photon detection in the solar-blind ultraviolet regime with low noise.

Original language	English
Article number	030401
Journal	Chinese Optics Letters
Volume	14
Issue number	3
DOIs	https://doi.org/10.3788/COL201614.030401
State	Published - 10 Mar 2016
Externally published	Yes

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title = "Enhanced solar-blind ultraviolet single-photon detection with a Geiger-mode silicon avalanche photodiode",

abstract = "Solar-blind ultraviolet detection is of great importance in astronomy and industrial and military applications. Here, we report enhanced solar-blind ultraviolet single-photon detection by a normal silicon avalanche photodiode (Si APD) single-photon detector with a specially designed photon-collecting device. By re-focusing the reflected photon from the Si chip surface on the detection area by the aluminum-coated hemisphere, the detection efficiency of the Si APD at 280 nm can be improved to 4.62\%. This system has the potential for high-efficiency photon detection in the solar-blind ultraviolet regime with low noise.",

author = "Yafan Shi and Zhaohui Li and Baicheng Feng and Peiqin Yan and Bingcheng Du and Hui Zhou and Haifeng Pan and Guang Wu",

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doi = "10.3788/COL201614.030401",

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AU - Shi, Yafan

AU - Li, Zhaohui

AU - Feng, Baicheng

AU - Yan, Peiqin

AU - Du, Bingcheng

AU - Zhou, Hui

AU - Pan, Haifeng

AU - Wu, Guang

PY - 2016/3/10

Y1 - 2016/3/10

N2 - Solar-blind ultraviolet detection is of great importance in astronomy and industrial and military applications. Here, we report enhanced solar-blind ultraviolet single-photon detection by a normal silicon avalanche photodiode (Si APD) single-photon detector with a specially designed photon-collecting device. By re-focusing the reflected photon from the Si chip surface on the detection area by the aluminum-coated hemisphere, the detection efficiency of the Si APD at 280 nm can be improved to 4.62%. This system has the potential for high-efficiency photon detection in the solar-blind ultraviolet regime with low noise.

AB - Solar-blind ultraviolet detection is of great importance in astronomy and industrial and military applications. Here, we report enhanced solar-blind ultraviolet single-photon detection by a normal silicon avalanche photodiode (Si APD) single-photon detector with a specially designed photon-collecting device. By re-focusing the reflected photon from the Si chip surface on the detection area by the aluminum-coated hemisphere, the detection efficiency of the Si APD at 280 nm can be improved to 4.62%. This system has the potential for high-efficiency photon detection in the solar-blind ultraviolet regime with low noise.

UR - https://www.scopus.com/pages/publications/84961266507

U2 - 10.3788/COL201614.030401

DO - 10.3788/COL201614.030401

M3 - 文章

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JO - Chinese Optics Letters

JF - Chinese Optics Letters

IS - 3

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ER -

Enhanced solar-blind ultraviolet single-photon detection with a Geiger-mode silicon avalanche photodiode

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