Enhanced performance of CdS quantum dot sensitized solar cells by low temperature vacuum annealing

Tian Lv; Guang Zhu; Likun Pan; Hengchao Sun; Xinjuan Liu; Nanjia Zhou; Zhuo Sun

doi:10.1166/nnl.2013.1498

Enhanced performance of CdS quantum dot sensitized solar cells by low temperature vacuum annealing

Tian Lv
, Guang Zhu
, Likun Pan^*
, Hengchao Sun
, Xinjuan Liu
, Nanjia Zhou
, Zhuo Sun

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A sensitized-type solar cell based on TiO₂ photoanode and CdS quantum dots as sensitizers had been studied. CdS QDs were grown in situ on TiO₂ film, utilizing successive ionic layer adsorption and reaction method. Vacuum annealing process was carried out on the CdS incorporated TiO2 (CdS-TiO₂) films at different temperatures. It is found that the short circuit current density and conversion efficiency of QDSSCs are significantly improved by vacuum annealing. A power conversion efficiency of about 1.84% has been obtained for the cell with CdS-TiO₂ film annealed at 373 K, which is about 28% higher than that for as-prepared cell (1.43%) under one sun illumination. The proper crystallinity of CdS and good interfacial contact between CdS and TiO₂ are obtained by annealing at 373 K, which can benefit the electron transfer from CdS to TiO₂, resulting in a highest conversion efficiency.

Original language	English
Pages (from-to)	277-281
Number of pages	5
Journal	Nanoscience and Nanotechnology Letters
Volume	5
Issue number	2
DOIs	https://doi.org/10.1166/nnl.2013.1498
State	Published - Feb 2013
Externally published	Yes

Keywords

Cds quantum dot
Sensitized solar cell
Tio Film
Vacuum annealing

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10.1166/nnl.2013.1498

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title = "Enhanced performance of CdS quantum dot sensitized solar cells by low temperature vacuum annealing",

abstract = "A sensitized-type solar cell based on TiO2 photoanode and CdS quantum dots as sensitizers had been studied. CdS QDs were grown in situ on TiO2 film, utilizing successive ionic layer adsorption and reaction method. Vacuum annealing process was carried out on the CdS incorporated TiO2 (CdS-TiO2) films at different temperatures. It is found that the short circuit current density and conversion efficiency of QDSSCs are significantly improved by vacuum annealing. A power conversion efficiency of about 1.84\% has been obtained for the cell with CdS-TiO2 film annealed at 373 K, which is about 28\% higher than that for as-prepared cell (1.43\%) under one sun illumination. The proper crystallinity of CdS and good interfacial contact between CdS and TiO2 are obtained by annealing at 373 K, which can benefit the electron transfer from CdS to TiO2, resulting in a highest conversion efficiency.",

keywords = "Cds quantum dot, Sensitized solar cell, Tio Film, Vacuum annealing",

author = "Tian Lv and Guang Zhu and Likun Pan and Hengchao Sun and Xinjuan Liu and Nanjia Zhou and Zhuo Sun",

year = "2013",

month = feb,

doi = "10.1166/nnl.2013.1498",

language = "英语",

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journal = "Nanoscience and Nanotechnology Letters",

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TY - JOUR

T1 - Enhanced performance of CdS quantum dot sensitized solar cells by low temperature vacuum annealing

AU - Lv, Tian

AU - Zhu, Guang

AU - Pan, Likun

AU - Sun, Hengchao

AU - Liu, Xinjuan

AU - Zhou, Nanjia

AU - Sun, Zhuo

PY - 2013/2

Y1 - 2013/2

N2 - A sensitized-type solar cell based on TiO2 photoanode and CdS quantum dots as sensitizers had been studied. CdS QDs were grown in situ on TiO2 film, utilizing successive ionic layer adsorption and reaction method. Vacuum annealing process was carried out on the CdS incorporated TiO2 (CdS-TiO2) films at different temperatures. It is found that the short circuit current density and conversion efficiency of QDSSCs are significantly improved by vacuum annealing. A power conversion efficiency of about 1.84% has been obtained for the cell with CdS-TiO2 film annealed at 373 K, which is about 28% higher than that for as-prepared cell (1.43%) under one sun illumination. The proper crystallinity of CdS and good interfacial contact between CdS and TiO2 are obtained by annealing at 373 K, which can benefit the electron transfer from CdS to TiO2, resulting in a highest conversion efficiency.

AB - A sensitized-type solar cell based on TiO2 photoanode and CdS quantum dots as sensitizers had been studied. CdS QDs were grown in situ on TiO2 film, utilizing successive ionic layer adsorption and reaction method. Vacuum annealing process was carried out on the CdS incorporated TiO2 (CdS-TiO2) films at different temperatures. It is found that the short circuit current density and conversion efficiency of QDSSCs are significantly improved by vacuum annealing. A power conversion efficiency of about 1.84% has been obtained for the cell with CdS-TiO2 film annealed at 373 K, which is about 28% higher than that for as-prepared cell (1.43%) under one sun illumination. The proper crystallinity of CdS and good interfacial contact between CdS and TiO2 are obtained by annealing at 373 K, which can benefit the electron transfer from CdS to TiO2, resulting in a highest conversion efficiency.

KW - Cds quantum dot

KW - Sensitized solar cell

KW - Tio Film

KW - Vacuum annealing

UR - https://www.scopus.com/pages/publications/84877732087

U2 - 10.1166/nnl.2013.1498

DO - 10.1166/nnl.2013.1498

M3 - 文章

AN - SCOPUS:84877732087

SN - 1941-4900

VL - 5

SP - 277

EP - 281

JO - Nanoscience and Nanotechnology Letters

JF - Nanoscience and Nanotechnology Letters

IS - 2

ER -

Enhanced performance of CdS quantum dot sensitized solar cells by low temperature vacuum annealing

Abstract

Keywords

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