Enhanced Kerr nonlinear effect of Raman transition in a A-type three-level atomic system

  • Hai Bin Wu
  • , Hong Chang
  • , Jie Ma
  • , Chang De Xie
  • , Hai Wang*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We report a theoretical study of linear and nonlinear susceptibilities of Raman transition in a A-type three-level atomic system. In the Raman transition, if the population of atoms is all prepared in the ground state which interacts with the control light, the linear susceptibility equals zero, while the third-order nonlinear susceptibility does not equal zero. By decreasing the nonradiative decay rate γ between the two ground states of the atoms, the Kerr nonlinear refractive index for cross-phase modulation can be significantly enhanced.

Original languageEnglish
Pages (from-to)3632-3636
Number of pages5
JournalWuli Xuebao/Acta Physica Sinica
Volume54
Issue number8
DOIs
StatePublished - Aug 2005
Externally publishedYes

Keywords

  • Electromagnetic induced transparency
  • Nonlinear effect for cross-phase modulation
  • Raman transition

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