Enhanced Fröhlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance

Wenlei Yu; Meijie Han; Kai Jiang; Zhihua Duan; Yawei Li; Zhigao Hu; Junhao Chu

doi:10.1002/jrs.4145

Enhanced Fröhlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance

Wenlei Yu, Meijie Han, Kai Jiang, Zhihua Duan, Yawei Li, Zhigao Hu, Junhao Chu

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Anomalous low temperature behaviors in cuprous oxide (Cu₂O) film grown on quartz substrate have been investigated by temperature-dependent Raman and transmittance spectra. The longitudinal optical components of two Γ₁₅- phonon modes become sharper and more intense at a low temperature. It can be found that the highest-order electronic transition located at 6.4 eV exhibits a minimum transmittance near 200 K. Correspondingly, the variations from phonon intensity ratios reveal obvious anomalies with the decreasing temperature, indicating the existence of strong electron-phonon coupling mediated by Fröhlich interaction in the Cu₂O films below the temperature of 200 K.

Original language	English
Pages (from-to)	142-146
Number of pages	5
Journal	Journal of Raman Spectroscopy
Volume	44
Issue number	1
DOIs	https://doi.org/10.1002/jrs.4145
State	Published - Jan 2013

Keywords

Fröhlich interaction
Raman spectroscopy
cuprous oxide

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10.1002/jrs.4145

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title = "Enhanced Fr{\"o}hlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance",

abstract = "Anomalous low temperature behaviors in cuprous oxide (Cu2O) film grown on quartz substrate have been investigated by temperature-dependent Raman and transmittance spectra. The longitudinal optical components of two Γ15- phonon modes become sharper and more intense at a low temperature. It can be found that the highest-order electronic transition located at 6.4 eV exhibits a minimum transmittance near 200 K. Correspondingly, the variations from phonon intensity ratios reveal obvious anomalies with the decreasing temperature, indicating the existence of strong electron-phonon coupling mediated by Fr{\"o}hlich interaction in the Cu2O films below the temperature of 200 K.",

keywords = "Fr{\"o}hlich interaction, Raman spectroscopy, cuprous oxide",

author = "Wenlei Yu and Meijie Han and Kai Jiang and Zhihua Duan and Yawei Li and Zhigao Hu and Junhao Chu",

year = "2013",

month = jan,

doi = "10.1002/jrs.4145",

language = "英语",

volume = "44",

pages = "142--146",

journal = "Journal of Raman Spectroscopy",

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T1 - Enhanced Fröhlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance

AU - Yu, Wenlei

AU - Han, Meijie

AU - Jiang, Kai

AU - Duan, Zhihua

AU - Li, Yawei

AU - Hu, Zhigao

AU - Chu, Junhao

PY - 2013/1

Y1 - 2013/1

N2 - Anomalous low temperature behaviors in cuprous oxide (Cu2O) film grown on quartz substrate have been investigated by temperature-dependent Raman and transmittance spectra. The longitudinal optical components of two Γ15- phonon modes become sharper and more intense at a low temperature. It can be found that the highest-order electronic transition located at 6.4 eV exhibits a minimum transmittance near 200 K. Correspondingly, the variations from phonon intensity ratios reveal obvious anomalies with the decreasing temperature, indicating the existence of strong electron-phonon coupling mediated by Fröhlich interaction in the Cu2O films below the temperature of 200 K.

AB - Anomalous low temperature behaviors in cuprous oxide (Cu2O) film grown on quartz substrate have been investigated by temperature-dependent Raman and transmittance spectra. The longitudinal optical components of two Γ15- phonon modes become sharper and more intense at a low temperature. It can be found that the highest-order electronic transition located at 6.4 eV exhibits a minimum transmittance near 200 K. Correspondingly, the variations from phonon intensity ratios reveal obvious anomalies with the decreasing temperature, indicating the existence of strong electron-phonon coupling mediated by Fröhlich interaction in the Cu2O films below the temperature of 200 K.

KW - Fröhlich interaction

KW - Raman spectroscopy

KW - cuprous oxide

UR - https://www.scopus.com/pages/publications/84872165929

U2 - 10.1002/jrs.4145

DO - 10.1002/jrs.4145

M3 - 文章

AN - SCOPUS:84872165929

SN - 0377-0486

VL - 44

SP - 142

EP - 146

JO - Journal of Raman Spectroscopy

JF - Journal of Raman Spectroscopy

IS - 1

ER -

Enhanced Fröhlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance

Abstract

Keywords

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