Enhanced Fröhlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance

Wenlei Yu; Meijie Han; Kai Jiang; Zhihua Duan; Yawei Li; Zhigao Hu; Junhao Chu

doi:10.1002/jrs.4145

Enhanced Fröhlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance

Wenlei Yu
, Meijie Han
, Kai Jiang
, Zhihua Duan
, Yawei Li
, Zhigao Hu^*
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Anomalous low temperature behaviors in cuprous oxide (Cu₂O) film grown on quartz substrate have been investigated by temperature-dependent Raman and transmittance spectra. The longitudinal optical components of two Γ₁₅- phonon modes become sharper and more intense at a low temperature. It can be found that the highest-order electronic transition located at 6.4 eV exhibits a minimum transmittance near 200 K. Correspondingly, the variations from phonon intensity ratios reveal obvious anomalies with the decreasing temperature, indicating the existence of strong electron-phonon coupling mediated by Fröhlich interaction in the Cu₂O films below the temperature of 200 K.

Original language	English
Pages (from-to)	142-146
Number of pages	5
Journal	Journal of Raman Spectroscopy
Volume	44
Issue number	1
DOIs	https://doi.org/10.1002/jrs.4145
State	Published - Jan 2013

Keywords

Fröhlich interaction
Raman spectroscopy
cuprous oxide

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10.1002/jrs.4145

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title = "Enhanced Fr{\"o}hlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance",

abstract = "Anomalous low temperature behaviors in cuprous oxide (Cu2O) film grown on quartz substrate have been investigated by temperature-dependent Raman and transmittance spectra. The longitudinal optical components of two Γ15- phonon modes become sharper and more intense at a low temperature. It can be found that the highest-order electronic transition located at 6.4 eV exhibits a minimum transmittance near 200 K. Correspondingly, the variations from phonon intensity ratios reveal obvious anomalies with the decreasing temperature, indicating the existence of strong electron-phonon coupling mediated by Fr{\"o}hlich interaction in the Cu2O films below the temperature of 200 K.",

keywords = "Fr{\"o}hlich interaction, Raman spectroscopy, cuprous oxide",

author = "Wenlei Yu and Meijie Han and Kai Jiang and Zhihua Duan and Yawei Li and Zhigao Hu and Junhao Chu",

year = "2013",

month = jan,

doi = "10.1002/jrs.4145",

language = "英语",

volume = "44",

pages = "142--146",

journal = "Journal of Raman Spectroscopy",

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TY - JOUR

T1 - Enhanced Fröhlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance

AU - Yu, Wenlei

AU - Han, Meijie

AU - Jiang, Kai

AU - Duan, Zhihua

AU - Li, Yawei

AU - Hu, Zhigao

AU - Chu, Junhao

PY - 2013/1

Y1 - 2013/1

N2 - Anomalous low temperature behaviors in cuprous oxide (Cu2O) film grown on quartz substrate have been investigated by temperature-dependent Raman and transmittance spectra. The longitudinal optical components of two Γ15- phonon modes become sharper and more intense at a low temperature. It can be found that the highest-order electronic transition located at 6.4 eV exhibits a minimum transmittance near 200 K. Correspondingly, the variations from phonon intensity ratios reveal obvious anomalies with the decreasing temperature, indicating the existence of strong electron-phonon coupling mediated by Fröhlich interaction in the Cu2O films below the temperature of 200 K.

AB - Anomalous low temperature behaviors in cuprous oxide (Cu2O) film grown on quartz substrate have been investigated by temperature-dependent Raman and transmittance spectra. The longitudinal optical components of two Γ15- phonon modes become sharper and more intense at a low temperature. It can be found that the highest-order electronic transition located at 6.4 eV exhibits a minimum transmittance near 200 K. Correspondingly, the variations from phonon intensity ratios reveal obvious anomalies with the decreasing temperature, indicating the existence of strong electron-phonon coupling mediated by Fröhlich interaction in the Cu2O films below the temperature of 200 K.

KW - Fröhlich interaction

KW - Raman spectroscopy

KW - cuprous oxide

UR - https://www.scopus.com/pages/publications/84872165929

U2 - 10.1002/jrs.4145

DO - 10.1002/jrs.4145

M3 - 文章

AN - SCOPUS:84872165929

SN - 0377-0486

VL - 44

SP - 142

EP - 146

JO - Journal of Raman Spectroscopy

JF - Journal of Raman Spectroscopy

IS - 1

ER -

Enhanced Fröhlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance

Abstract

Keywords

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