Enhanced ferroelectric properties of Fe-doped BaTiO3 thin film deposited on LaNiO3/Si substrate by sol-gel technique

Zhipeng Liu; Hongmei Deng; Pingxiong Yang; Junhao Chu

doi:10.1016/j.matlet.2009.09.028

Enhanced ferroelectric properties of Fe-doped BaTiO₃ thin film deposited on LaNiO₃/Si substrate by sol-gel technique

Zhipeng Liu
, Hongmei Deng
, Pingxiong Yang^*
, Junhao Chu

^*Corresponding author for this work

Ministry of Education of the People's Republic of China
Shanghai University

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The ferroelectric thin films of Fe-doped BaTiO₃ and undoped BaTiO₃ were prepared on LaNiO₃ coating Si substrates by sol-gel technique. It was found that a small amount of Fe dopant could significantly enhance the ferroelectric properties of the BaTiO₃ thin film. The remnant polarization of Fe-doped BaTiO₃ thin film at room temperature reached to 14.9 μC/cm². The loss tangent, compared to the undoped BaTiO₃ film, was increased with frequency increasing and the dielectric constant was decreased. The possible mechanism of enhanced ferroelectric properties of Fe-doped BaTiO₃ thin film was discussed. The results show the potential role of Fe dopant in improving the ferroelectric properties of BaTiO₃ thin film.

Original language	English
Pages (from-to)	2622-2624
Number of pages	3
Journal	Materials Letters
Volume	63
Issue number	30
DOIs	https://doi.org/10.1016/j.matlet.2009.09.028
State	Published - 31 Dec 2009
Externally published	Yes

Keywords

BaTiO
Ferroelectricity
Sol-gel
Thin film

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10.1016/j.matlet.2009.09.028

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@article{894f6b65f4fa4814aad5e149c71b0977,

title = "Enhanced ferroelectric properties of Fe-doped BaTiO3 thin film deposited on LaNiO3/Si substrate by sol-gel technique",

abstract = "The ferroelectric thin films of Fe-doped BaTiO3 and undoped BaTiO3 were prepared on LaNiO3 coating Si substrates by sol-gel technique. It was found that a small amount of Fe dopant could significantly enhance the ferroelectric properties of the BaTiO3 thin film. The remnant polarization of Fe-doped BaTiO3 thin film at room temperature reached to 14.9 μC/cm2. The loss tangent, compared to the undoped BaTiO3 film, was increased with frequency increasing and the dielectric constant was decreased. The possible mechanism of enhanced ferroelectric properties of Fe-doped BaTiO3 thin film was discussed. The results show the potential role of Fe dopant in improving the ferroelectric properties of BaTiO3 thin film.",

keywords = "BaTiO, Ferroelectricity, Sol-gel, Thin film",

author = "Zhipeng Liu and Hongmei Deng and Pingxiong Yang and Junhao Chu",

year = "2009",

month = dec,

day = "31",

doi = "10.1016/j.matlet.2009.09.028",

language = "英语",

volume = "63",

pages = "2622--2624",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

number = "30",

}

TY - JOUR

T1 - Enhanced ferroelectric properties of Fe-doped BaTiO3 thin film deposited on LaNiO3/Si substrate by sol-gel technique

AU - Liu, Zhipeng

AU - Deng, Hongmei

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2009/12/31

Y1 - 2009/12/31

N2 - The ferroelectric thin films of Fe-doped BaTiO3 and undoped BaTiO3 were prepared on LaNiO3 coating Si substrates by sol-gel technique. It was found that a small amount of Fe dopant could significantly enhance the ferroelectric properties of the BaTiO3 thin film. The remnant polarization of Fe-doped BaTiO3 thin film at room temperature reached to 14.9 μC/cm2. The loss tangent, compared to the undoped BaTiO3 film, was increased with frequency increasing and the dielectric constant was decreased. The possible mechanism of enhanced ferroelectric properties of Fe-doped BaTiO3 thin film was discussed. The results show the potential role of Fe dopant in improving the ferroelectric properties of BaTiO3 thin film.

AB - The ferroelectric thin films of Fe-doped BaTiO3 and undoped BaTiO3 were prepared on LaNiO3 coating Si substrates by sol-gel technique. It was found that a small amount of Fe dopant could significantly enhance the ferroelectric properties of the BaTiO3 thin film. The remnant polarization of Fe-doped BaTiO3 thin film at room temperature reached to 14.9 μC/cm2. The loss tangent, compared to the undoped BaTiO3 film, was increased with frequency increasing and the dielectric constant was decreased. The possible mechanism of enhanced ferroelectric properties of Fe-doped BaTiO3 thin film was discussed. The results show the potential role of Fe dopant in improving the ferroelectric properties of BaTiO3 thin film.

KW - BaTiO

KW - Ferroelectricity

KW - Sol-gel

KW - Thin film

UR - https://www.scopus.com/pages/publications/70350012272

U2 - 10.1016/j.matlet.2009.09.028

DO - 10.1016/j.matlet.2009.09.028

M3 - 文章

AN - SCOPUS:70350012272

SN - 0167-577X

VL - 63

SP - 2622

EP - 2624

JO - Materials Letters

JF - Materials Letters

IS - 30

ER -

Enhanced ferroelectric properties of Fe-doped BaTiO₃ thin film deposited on LaNiO₃/Si substrate by sol-gel technique

Abstract

Keywords

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