Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode

X. J. Meng; J. L. Sun; J. Yu; G. S. Wang; S. L. Guo; J. H. Chu

doi:10.1007/s003390000696

Enhanced fatigue property of PZT thin films using LaNiO₃ thin layer as bottom electrode

X. J. Meng^*
, J. L. Sun
, J. Yu
, G. S. Wang
, S. L. Guo
, J. H. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

A highly (100)-oriented metallic LaNiO₃ film was prepared directly on a Si substrate by a simple metalorganic decomposition (MOD) technique using lanthanum nitrate and nickel acetate as the starting sources. Subsequent Pb(Zr, Ti)O₃ (PZT) thin films deposited on the LaNiO₃coated Si substrate were obtained by a modified sol-gel method. It was found that the PZT thin films began to form a single perovskite phase at a tow annealing temperature of 530 °C, and exhibited highly (100) orientation. A ferroelectric capacitor of Pt/Pb(Zr, Ti)O₃/LaNiO₃/Si annealed at 600 °C displayed a good P - E hysteresis characteristic and was fatigue-free even after 10¹¹ switching cycles.

Original language	English
Pages (from-to)	323-325
Number of pages	3
Journal	Applied Physics A: Materials Science and Processing
Volume	73
Issue number	3
DOIs	https://doi.org/10.1007/s003390000696
State	Published - 2001
Externally published	Yes

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title = "Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode",

abstract = "A highly (100)-oriented metallic LaNiO3 film was prepared directly on a Si substrate by a simple metalorganic decomposition (MOD) technique using lanthanum nitrate and nickel acetate as the starting sources. Subsequent Pb(Zr, Ti)O3 (PZT) thin films deposited on the LaNiO3coated Si substrate were obtained by a modified sol-gel method. It was found that the PZT thin films began to form a single perovskite phase at a tow annealing temperature of 530 °C, and exhibited highly (100) orientation. A ferroelectric capacitor of Pt/Pb(Zr, Ti)O3/LaNiO3/Si annealed at 600 °C displayed a good P - E hysteresis characteristic and was fatigue-free even after 1011 switching cycles.",

author = "Meng, \{X. J.\} and Sun, \{J. L.\} and J. Yu and Wang, \{G. S.\} and Guo, \{S. L.\} and Chu, \{J. H.\}",

year = "2001",

doi = "10.1007/s003390000696",

language = "英语",

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journal = "Applied Physics A: Materials Science and Processing",

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}

TY - JOUR

T1 - Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode

AU - Meng, X. J.

AU - Sun, J. L.

AU - Yu, J.

AU - Wang, G. S.

AU - Guo, S. L.

AU - Chu, J. H.

PY - 2001

Y1 - 2001

N2 - A highly (100)-oriented metallic LaNiO3 film was prepared directly on a Si substrate by a simple metalorganic decomposition (MOD) technique using lanthanum nitrate and nickel acetate as the starting sources. Subsequent Pb(Zr, Ti)O3 (PZT) thin films deposited on the LaNiO3coated Si substrate were obtained by a modified sol-gel method. It was found that the PZT thin films began to form a single perovskite phase at a tow annealing temperature of 530 °C, and exhibited highly (100) orientation. A ferroelectric capacitor of Pt/Pb(Zr, Ti)O3/LaNiO3/Si annealed at 600 °C displayed a good P - E hysteresis characteristic and was fatigue-free even after 1011 switching cycles.

AB - A highly (100)-oriented metallic LaNiO3 film was prepared directly on a Si substrate by a simple metalorganic decomposition (MOD) technique using lanthanum nitrate and nickel acetate as the starting sources. Subsequent Pb(Zr, Ti)O3 (PZT) thin films deposited on the LaNiO3coated Si substrate were obtained by a modified sol-gel method. It was found that the PZT thin films began to form a single perovskite phase at a tow annealing temperature of 530 °C, and exhibited highly (100) orientation. A ferroelectric capacitor of Pt/Pb(Zr, Ti)O3/LaNiO3/Si annealed at 600 °C displayed a good P - E hysteresis characteristic and was fatigue-free even after 1011 switching cycles.

UR - https://www.scopus.com/pages/publications/0034823993

U2 - 10.1007/s003390000696

DO - 10.1007/s003390000696

M3 - 文章

AN - SCOPUS:0034823993

SN - 0947-8396

VL - 73

SP - 323

EP - 325

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 3

ER -

Enhanced fatigue property of PZT thin films using LaNiO₃ thin layer as bottom electrode

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