Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 thin membranes

Zheng Hu Zuo; Qing Feng Zhan; Bin Chen; Hua Li Yang; Yi Wei Liu; Lu Ping Liu; Ya Li Xie; Run Wei Li

doi:10.1088/1674-1056/25/8/087702

Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr_0.95Ti_0.05)O₃ thin membranes

Zheng Hu Zuo, Qing Feng Zhan, Bin Chen, Hua Li Yang, Yi Wei Liu, Lu Ping Liu, Ya Li Xie, Run Wei Li

CAS - Ningbo Institute of Material Technology and Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Free-standing antiferroelectric Pb(Zr_0.95Ti_0.05)O₃ (PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition. X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an a-axis preferred orientation. The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm, but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film. The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm³ and 54.5%, respectively. In contrast, after removing the substrate, the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm³ and 67.9%, respectively.

Original language	English
Article number	087702
Journal	Chinese Physics B
Volume	25
Issue number	8
DOIs	https://doi.org/10.1088/1674-1056/25/8/087702
State	Published - Aug 2016
Externally published	Yes

Keywords

antiferroelectric films
energy storage
freestanding

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1088/1674-1056/25/8/087702

Cite this

@article{7cd7d2d9424c43b5b4acd13c71e68020,

title = "Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 thin membranes",

abstract = "Free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 (PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition. X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an a-axis preferred orientation. The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm, but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film. The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm3 and 54.5\%, respectively. In contrast, after removing the substrate, the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm3 and 67.9\%, respectively.",

keywords = "antiferroelectric films, energy storage, freestanding",

author = "Zuo, \{Zheng Hu\} and Zhan, \{Qing Feng\} and Bin Chen and Yang, \{Hua Li\} and Liu, \{Yi Wei\} and Liu, \{Lu Ping\} and Xie, \{Ya Li\} and Li, \{Run Wei\}",

note = "Publisher Copyright: {\textcopyright} 2016 Chinese Physical Society and IOP Publishing Ltd.",

year = "2016",

month = aug,

doi = "10.1088/1674-1056/25/8/087702",

language = "英语",

volume = "25",

journal = "Chinese Physics B",

issn = "1674-1056",

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TY - JOUR

T1 - Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 thin membranes

AU - Zuo, Zheng Hu

AU - Zhan, Qing Feng

AU - Chen, Bin

AU - Yang, Hua Li

AU - Liu, Yi Wei

AU - Liu, Lu Ping

AU - Xie, Ya Li

AU - Li, Run Wei

PY - 2016/8

Y1 - 2016/8

N2 - Free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 (PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition. X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an a-axis preferred orientation. The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm, but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film. The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm3 and 54.5%, respectively. In contrast, after removing the substrate, the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm3 and 67.9%, respectively.

AB - Free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 (PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition. X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an a-axis preferred orientation. The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm, but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film. The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm3 and 54.5%, respectively. In contrast, after removing the substrate, the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm3 and 67.9%, respectively.

KW - antiferroelectric films

KW - energy storage

KW - freestanding

UR - https://www.scopus.com/pages/publications/84980411250

U2 - 10.1088/1674-1056/25/8/087702

DO - 10.1088/1674-1056/25/8/087702

M3 - 文章

AN - SCOPUS:84980411250

SN - 1674-1056

VL - 25

JO - Chinese Physics B

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