Empirical All Region Current Based PHEMT DC Model

Jianjun Gao; Xiuping Li; Hong Wang; Georg Boeck

Empirical All Region Current Based PHEMT DC Model

Jianjun Gao^*
, Xiuping Li
, Hong Wang
, Georg Boeck

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

This paper proposes an improved PHEMT DC model which covers high and low current applications, as well good agreement is obtained between simulated and measured results for a 0.25(1 × 40) μm double heterostructure PHEMT.

Original language	English
Pages	99-101
Number of pages	3
State	Published - 2003
Externally published	Yes
Event	2003 SMBO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003 - Foz do Iguacu, Brazil Duration: 20 Sep 2003 → 23 Sep 2003

Conference

Conference	2003 SMBO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003
Country/Territory	Brazil
City	Foz do Iguacu
Period	20/09/03 → 23/09/03

Keywords

DC model
Equivalent circuits
PHEMT device

Cite this

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title = "Empirical All Region Current Based PHEMT DC Model",

abstract = "This paper proposes an improved PHEMT DC model which covers high and low current applications, as well good agreement is obtained between simulated and measured results for a 0.25(1 × 40) μm double heterostructure PHEMT.",

keywords = "DC model, Equivalent circuits, PHEMT device",

author = "Jianjun Gao and Xiuping Li and Hong Wang and Georg Boeck",

year = "2003",

language = "英语",

pages = "99--101",

note = "2003 SMBO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003 ; Conference date: 20-09-2003 Through 23-09-2003",

}

TY - CONF

T1 - Empirical All Region Current Based PHEMT DC Model

AU - Gao, Jianjun

AU - Li, Xiuping

AU - Wang, Hong

AU - Boeck, Georg

PY - 2003

Y1 - 2003

N2 - This paper proposes an improved PHEMT DC model which covers high and low current applications, as well good agreement is obtained between simulated and measured results for a 0.25(1 × 40) μm double heterostructure PHEMT.

AB - This paper proposes an improved PHEMT DC model which covers high and low current applications, as well good agreement is obtained between simulated and measured results for a 0.25(1 × 40) μm double heterostructure PHEMT.

KW - DC model

KW - Equivalent circuits

KW - PHEMT device

UR - https://www.scopus.com/pages/publications/1642281025

M3 - 论文

AN - SCOPUS:1642281025

SP - 99

EP - 101

T2 - 2003 SMBO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003

Y2 - 20 September 2003 through 23 September 2003

ER -

Empirical All Region Current Based PHEMT DC Model

Abstract

Conference

Keywords

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Cite this