Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors

Ao Zhang; Jianjun Gao

doi:10.1109/ACCESS.2019.2893613

Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors

Ao Zhang, Jianjun Gao

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-π topology in the low-frequency ranges are derived. The analytical and experimental results show that under the same bias condition, good emitter-length scaling of the noise and small signal model parameters can be achieved between 1.6 μm × 10 μm, 1.6 μm × 20 μm and 1.6 μm × 30 μm InP HBTs.

Original language	English
Article number	8618445
Pages (from-to)	13939-13944
Number of pages	6
Journal	IEEE Access
Volume	7
DOIs	https://doi.org/10.1109/ACCESS.2019.2893613
State	Published - 2019

Keywords

Equivalent circuits
HBT
noise modeling
parameter extraction
semiconductor device modeling

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10.1109/ACCESS.2019.2893613

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title = "Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors",

abstract = "In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-π topology in the low-frequency ranges are derived. The analytical and experimental results show that under the same bias condition, good emitter-length scaling of the noise and small signal model parameters can be achieved between 1.6 μm × 10 μm, 1.6 μm × 20 μm and 1.6 μm × 30 μm InP HBTs.",

keywords = "Equivalent circuits, HBT, noise modeling, parameter extraction, semiconductor device modeling",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.",

year = "2019",

doi = "10.1109/ACCESS.2019.2893613",

language = "英语",

volume = "7",

pages = "13939--13944",

journal = "IEEE Access",

issn = "2169-3536",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2019

Y1 - 2019

N2 - In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-π topology in the low-frequency ranges are derived. The analytical and experimental results show that under the same bias condition, good emitter-length scaling of the noise and small signal model parameters can be achieved between 1.6 μm × 10 μm, 1.6 μm × 20 μm and 1.6 μm × 30 μm InP HBTs.

AB - In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-π topology in the low-frequency ranges are derived. The analytical and experimental results show that under the same bias condition, good emitter-length scaling of the noise and small signal model parameters can be achieved between 1.6 μm × 10 μm, 1.6 μm × 20 μm and 1.6 μm × 30 μm InP HBTs.

KW - Equivalent circuits

KW - HBT

KW - noise modeling

KW - parameter extraction

KW - semiconductor device modeling

UR - https://www.scopus.com/pages/publications/85061724958

U2 - 10.1109/ACCESS.2019.2893613

DO - 10.1109/ACCESS.2019.2893613

M3 - 文章

AN - SCOPUS:85061724958

SN - 2169-3536

VL - 7

SP - 13939

EP - 13944

JO - IEEE Access

JF - IEEE Access

M1 - 8618445

ER -

Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors

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