Emission lifetime measurement of silicon vacancy in diamond by single-photon frequency upconversion

  • Y. Rong
  • , J. Ma
  • , B. Wu
  • , H. Pan
  • , E. Wu*
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We achieve frequency upconversion of fluorescence from SiV center in bulk diamond. The emission decay is obtained by measuring the upconverted photons with pump delay varying. Lifetime of the SiV center is about 0.54 ns.

Original languageEnglish
Title of host publicationQuantum Information and Measurement, QIM 2017
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781943580262
DOIs
StatePublished - 2017
Externally publishedYes
EventQuantum Information and Measurement, QIM 2017 - Paris, France
Duration: 5 Apr 20177 Apr 2017

Publication series

NameOptics InfoBase Conference Papers
VolumePart F73-QIM 2017
ISSN (Electronic)2162-2701

Conference

ConferenceQuantum Information and Measurement, QIM 2017
Country/TerritoryFrance
CityParis
Period5/04/177/04/17

Fingerprint

Dive into the research topics of 'Emission lifetime measurement of silicon vacancy in diamond by single-photon frequency upconversion'. Together they form a unique fingerprint.

Cite this