Emission Kinetics from PbSe Quantum Dots in Glass Matrix at High Excitation Levels

Jin Hong; Han Wang; Fangyu Yue; Jens W. Tomm; Detlef Kruschke; Chengbin Jing; Shaoqiang Chen; Ye Chen; Weida Hu; Junhao Chu

doi:10.1002/pssr.201800012

Emission Kinetics from PbSe Quantum Dots in Glass Matrix at High Excitation Levels

Jin Hong
, Han Wang
, Fangyu Yue^*
, Jens W. Tomm
, Detlef Kruschke
, Chengbin Jing
, Shaoqiang Chen
, Ye Chen
, Weida Hu
, Junhao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Letter › peer-review

4 Scopus citations

Abstract

The photoluminescence dynamics of PbSe quantum dots in a glass matrix (PbSe:Glass) is investigated at high excitation levels. Up to 470 meV blue-shifted emissions are observed, which are assigned to excited-state emission populated by carrier accumulation. Rapid photoluminescence decays of ∼25–40 ps are observed. Together with a threshold-like dependence on excitation, even at room temperature, this component is tentatively attributed to amplified spontaneous emission. The absence of stimulated emission from the ground state and the overall higher threshold compared to PbS:Glass suggest that there are more intrinsic restrictions on the use of PbSe:Glass as a laser material than for PbS:Glass.

Original language	English
Article number	1800012
Journal	Physica Status Solidi - Rapid Research Letters
Volume	12
Issue number	4
DOIs	https://doi.org/10.1002/pssr.201800012
State	Published - Apr 2018

Keywords

PbSe quantum dots
amplified spontaneous emission
carrier accumulation
excited state emissions

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10.1002/pssr.201800012

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title = "Emission Kinetics from PbSe Quantum Dots in Glass Matrix at High Excitation Levels",

abstract = "The photoluminescence dynamics of PbSe quantum dots in a glass matrix (PbSe:Glass) is investigated at high excitation levels. Up to 470 meV blue-shifted emissions are observed, which are assigned to excited-state emission populated by carrier accumulation. Rapid photoluminescence decays of ∼25–40 ps are observed. Together with a threshold-like dependence on excitation, even at room temperature, this component is tentatively attributed to amplified spontaneous emission. The absence of stimulated emission from the ground state and the overall higher threshold compared to PbS:Glass suggest that there are more intrinsic restrictions on the use of PbSe:Glass as a laser material than for PbS:Glass.",

keywords = "PbSe quantum dots, amplified spontaneous emission, carrier accumulation, excited state emissions",

author = "Jin Hong and Han Wang and Fangyu Yue and Tomm, \{Jens W.\} and Detlef Kruschke and Chengbin Jing and Shaoqiang Chen and Ye Chen and Weida Hu and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2018",

month = apr,

doi = "10.1002/pssr.201800012",

language = "英语",

volume = "12",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "4",

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TY - JOUR

T1 - Emission Kinetics from PbSe Quantum Dots in Glass Matrix at High Excitation Levels

AU - Hong, Jin

AU - Wang, Han

AU - Yue, Fangyu

AU - Tomm, Jens W.

AU - Kruschke, Detlef

AU - Jing, Chengbin

AU - Chen, Shaoqiang

AU - Chen, Ye

AU - Hu, Weida

AU - Chu, Junhao

PY - 2018/4

Y1 - 2018/4

N2 - The photoluminescence dynamics of PbSe quantum dots in a glass matrix (PbSe:Glass) is investigated at high excitation levels. Up to 470 meV blue-shifted emissions are observed, which are assigned to excited-state emission populated by carrier accumulation. Rapid photoluminescence decays of ∼25–40 ps are observed. Together with a threshold-like dependence on excitation, even at room temperature, this component is tentatively attributed to amplified spontaneous emission. The absence of stimulated emission from the ground state and the overall higher threshold compared to PbS:Glass suggest that there are more intrinsic restrictions on the use of PbSe:Glass as a laser material than for PbS:Glass.

AB - The photoluminescence dynamics of PbSe quantum dots in a glass matrix (PbSe:Glass) is investigated at high excitation levels. Up to 470 meV blue-shifted emissions are observed, which are assigned to excited-state emission populated by carrier accumulation. Rapid photoluminescence decays of ∼25–40 ps are observed. Together with a threshold-like dependence on excitation, even at room temperature, this component is tentatively attributed to amplified spontaneous emission. The absence of stimulated emission from the ground state and the overall higher threshold compared to PbS:Glass suggest that there are more intrinsic restrictions on the use of PbSe:Glass as a laser material than for PbS:Glass.

KW - PbSe quantum dots

KW - amplified spontaneous emission

KW - carrier accumulation

KW - excited state emissions

UR - https://www.scopus.com/pages/publications/85044736325

U2 - 10.1002/pssr.201800012

DO - 10.1002/pssr.201800012

M3 - 快报

AN - SCOPUS:85044736325

SN - 1862-6254

VL - 12

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 4

M1 - 1800012

ER -

Emission Kinetics from PbSe Quantum Dots in Glass Matrix at High Excitation Levels

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Keywords

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