Ellipsometric characterization of LaNio3-x films grown on Si (111) substrates: Effects of oxygen partial pressure

Z. G. Hu; Z. M. Huang; Y. N. Wu; Q. Zhao; G. S. Wang; J. H. Chu

doi:10.1063/1.1686904

Ellipsometric characterization of LaNio_3-x films grown on Si (111) substrates: Effects of oxygen partial pressure

Z. G. Hu^*
, Z. M. Huang
, Y. N. Wu
, Q. Zhao
, G. S. Wang
, J. H. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The optical properties of the LaNiO_3-x films were investigated using high-accuracy spectroscopic ellipsometry technique. The parameterized Drude and double Lorentzian oscillator dispersion relation was used to express the optical properties of the LaNiO_3-x films. It was found that refractive index decreases with increasing oxygen partial pressure in the measured wavelength region except for the film with 50% oxygen partial pressure. The large stoichiometric ratio Ni:La was induced to the small resistivity of the LaNiO_3-x films.

Original language	English
Pages (from-to)	4036-4041
Number of pages	6
Journal	Journal of Applied Physics
Volume	95
Issue number	8
DOIs	https://doi.org/10.1063/1.1686904
State	Published - 15 Apr 2004
Externally published	Yes

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title = "Ellipsometric characterization of LaNio3-x films grown on Si (111) substrates: Effects of oxygen partial pressure",

abstract = "The optical properties of the LaNiO3-x films were investigated using high-accuracy spectroscopic ellipsometry technique. The parameterized Drude and double Lorentzian oscillator dispersion relation was used to express the optical properties of the LaNiO3-x films. It was found that refractive index decreases with increasing oxygen partial pressure in the measured wavelength region except for the film with 50\% oxygen partial pressure. The large stoichiometric ratio Ni:La was induced to the small resistivity of the LaNiO3-x films.",

author = "Hu, \{Z. G.\} and Huang, \{Z. M.\} and Wu, \{Y. N.\} and Q. Zhao and Wang, \{G. S.\} and Chu, \{J. H.\}",

year = "2004",

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T1 - Ellipsometric characterization of LaNio3-x films grown on Si (111) substrates

T2 - Effects of oxygen partial pressure

AU - Hu, Z. G.

AU - Huang, Z. M.

AU - Wu, Y. N.

AU - Zhao, Q.

AU - Wang, G. S.

AU - Chu, J. H.

PY - 2004/4/15

Y1 - 2004/4/15

N2 - The optical properties of the LaNiO3-x films were investigated using high-accuracy spectroscopic ellipsometry technique. The parameterized Drude and double Lorentzian oscillator dispersion relation was used to express the optical properties of the LaNiO3-x films. It was found that refractive index decreases with increasing oxygen partial pressure in the measured wavelength region except for the film with 50% oxygen partial pressure. The large stoichiometric ratio Ni:La was induced to the small resistivity of the LaNiO3-x films.

AB - The optical properties of the LaNiO3-x films were investigated using high-accuracy spectroscopic ellipsometry technique. The parameterized Drude and double Lorentzian oscillator dispersion relation was used to express the optical properties of the LaNiO3-x films. It was found that refractive index decreases with increasing oxygen partial pressure in the measured wavelength region except for the film with 50% oxygen partial pressure. The large stoichiometric ratio Ni:La was induced to the small resistivity of the LaNiO3-x films.

UR - https://www.scopus.com/pages/publications/2342614325

U2 - 10.1063/1.1686904

DO - 10.1063/1.1686904

M3 - 文章

AN - SCOPUS:2342614325

SN - 0021-8979

VL - 95

SP - 4036

EP - 4041

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Ellipsometric characterization of LaNio_3-x films grown on Si (111) substrates: Effects of oxygen partial pressure

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